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Role of Tip Material in Scanning Tunneling Microscopy

Published online by Cambridge University Press:  25 February 2011

C. Julian Chen*
Affiliation:
IBM T. J. Watson Research Center, Yorktown Heights, NY 10598, USA
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Abstract

In this paper, we show that atomic resolution in scanning tunneling microscopy (STM) originates from pz or dz2 states on the tip. Consequently, only a limited selection of tip materials can provide atomic resolution: d-band metals, for example, Pt, Ir, Pd, Rh, W, Mo; semiconductors that tend to form p-like dangling bonds, for example, Si.

Type
Research Article
Copyright
Copyright © Materials Research Society 1990

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References

REFERENCES

1. Tersoff, J. and Hamann, D. R., Phys. Rev. Lett. 50, 1998 (1983); Phys. Rev. B 31, 805 (1985); J. Tersoff, Phys. Rev. B 39, 1052 (1989).Google Scholar
2. Hallmark, V. M., Chiang, S., Rabolt, J. F., Swalen, J. D., and Wilson, R. J., Phys. Rev. Lett. 59, 2879 (1987);Google Scholar
3. Wöll, Ch., Chiang, S., Wilson, R.J., and Lippel, P. H., Phys. Rev. B 39, 7988 (1989).Google Scholar
4. Wintterlin, J., Wiechers, J., Burne, H., Gritsch, T., Hifer, H., and Behm, R. J., Phys. Rev. Lett. 62, 59 (1989).Google Scholar
5. Lippel, P. H., Wilson, R. J., Miller, M. D., Wöll, Ch., and Chiang, S., Phys. Rev. Lett. 62, 171 (1989). The number 0.2 Å in Table 1 is an private information from the authors.Google Scholar
6. Pathica, J. B., Phys. Rev. Lett. 57, 3235 (1986). It was suggested that the observed image is a result of sliding of two corrugated planes with the same periodicity. However, the clear observation of atomic-size defects[3] and the 3.5 eV apparent barrier height[4] prevent this interpretation to be applied on those metal surfaces. For an analysis of the model proposed in Ref [4], see Ref. [7].Google Scholar
7. Ciraci, S., Baratoff, A., and Batra, I. P., Enhanced contrast and atomic forces in scanning tunneling microscopy, submitted to Phys. Rev. Lett.Google Scholar
8. Baratoff, A., Physica 127B, 143 (1984).Google Scholar
9. Demuth, J. E., Koehler, U. and Hamers, R. J., J. Microscopy 151, 299 (1988).Google Scholar
10. Ohnishi, S. and Tsukuda, M., Solid State Commun. 71, 391 (1989).Google Scholar
11. Chen, C. J., J. Vac. Sci. Technol. A 6, 319 (1988).Google Scholar
12. Ashcroft, N. W. and Mermin, N. D., Solid State Physics, Saunders, 1976. See pp. 306307. A. Zangwill, Physics at Surfaces, Cambridge University Press, 1988. See pp. 82-83.Google Scholar
13. Lang, N. D., Phys. Rev. Lett. 55, 230 (1985); ibid., 56, 1164 (1986).Google Scholar