Hostname: page-component-78c5997874-v9fdk Total loading time: 0 Render date: 2024-11-05T04:53:13.749Z Has data issue: false hasContentIssue false

'The Role of the Grain Boundary on the Resistivity of Pb(Fe1/2Nb1/2)O3 at Room Temperature

Published online by Cambridge University Press:  01 February 2011

Sang-Bop Lee
Affiliation:
School of Materials Science and Engineering, Seoul National University, Seoul, 151-744, Korea
Kwang-Ho Lee
Affiliation:
School of Materials Science and Engineering, Seoul National University, Seoul, 151-744, Korea
Hwan Kim
Affiliation:
School of Materials Science and Engineering, Seoul National University, Seoul, 151-744, Korea
Get access

Abstract

The effect of changing sintering temperature on the grain boundary properties and the room temperature resistivity (ρRT) of Pb(Fe1/2Nb1/2)O3 (PFN) was investigated. Monitering the temperature dependence of resistivity showed that the ρRT's of 1050°C and 1150°C-sintered specimen were 1011ΩEcm and 104ΩEcm respectively, but the resistivity above 300°C became nearly identical. The previous model, that the low resistivity of PFN is due to the electron hopping between Fe2+ and Fe3+ driven by the reduction of PFN, couldn't explain this phenomenon, and the reconsideration of the Fe reduction revealed that the difference of electron concentration between the 1050°C and 1150°C-sintered specimen couldn't exceed one order of magnitude. The role of the grain boundary was introduced in order to account for this phenomenon.

Type
Research Article
Copyright
Copyright © Materials Research Society 2002

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Cross, L. E., Ferroelectrics, 76, 241 (1970).Google Scholar
2. Randall, C. A. and Bhalla, A. S., Shrout, T. R. and Cross, L. E., J. Mater. Res., 5, 829 (1990).Google Scholar
3. Chiu, C. C. and Desu, S. B., Mater. Sci. & Eng., B21, 26 (1993).Google Scholar
4. Ananta, S. and Thomas, N. W., J. Europ. Ceram. Soc., 19, 1873 (1999).Google Scholar
5. Ichinose, N. I. and Kato, N., Jpn. J. Appl. Phys., 33, 5423 (1994).Google Scholar
6. Wang, X., Gui, Z., Li, L. and Zhang, X., Mater. Lett., 20, 75 (1994).Google Scholar
7. Wang, X., Zhang, X. and Gu, B., J. Mater. Sci. Lett., 15, 864 (1996).Google Scholar
8. Song, C. R., PhD. Thesis, Seoul National University, Korea, 1999.Google Scholar
9. Lee, D. K. and Yoo, H. I., J. Electrochem. Soc., 147, 2835 (2000).Google Scholar