Hostname: page-component-586b7cd67f-tf8b9 Total loading time: 0 Render date: 2024-11-25T15:47:27.146Z Has data issue: false hasContentIssue false
  • English
  • Français

Role of Surface Reconstruction and External Ion Beam in the Growth Kinetics of III-V Molecular Beam Epitaxy

Published online by Cambridge University Press:  25 February 2011

S. B. Ogale ,
M. Thomsen  and
A. Madhukar
S. B. Ogale
Affiliation:
Departments of Materials Science and Physics, University of Southern California, Los Angeles, CA 90089-0241
M. Thomsen
Affiliation:
Departments of Materials Science and Physics, University of Southern California, Los Angeles, CA 90089-0241
A. Madhukar
Affiliation:
Departments of Materials Science and Physics, University of Southern California, Los Angeles, CA 90089-0241
Get access

Abstract

Computer simulations of III-V molecular beam epitaxy (MBE) show that surface reconstruction induced modulation of kinetic rates could give rise to ordering in alloys. Results are also presented for the possible influence of an external ion beam in achieving low temperature epitaxy as well as smoother growth front under usual conditions.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 94: Symposium D – Initial Stages of Epitaxial Growth , 1987 , 83
Copyright
Copyright © Materials Research Society 1987

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. See, for example, Madhukar, A. and Ghaisas, S.V., CRC Critical Reviews in Solid State and Materials Sciences (In Press).Google Scholar
2. Yen, M.Y., Madhukar, A., Lewis, B.F., Fernandez, R., Eng, L. and Grunthaner, F. J., Surf. Sc. 174, 606 (1986).CrossRefGoogle Scholar
3. Kuan, T. S., Kuech, T.F., Wang, W.I. and Wilkie, E.L., Phys. Rev. Letts. 54, 201 (1985).Google Scholar
4. Petroff, P.M., Cho, A.Y., Reinhart, F.K., Gossard, A.C. and Weigmann, W., Phys. Rev. Lett. 48, 170 (1982).Google Scholar
5. Ghaisas, S.V. and Madhukar, A., Phys. Rev. Letts. 56, 1066 (1986).Google Scholar
6. Cho, A.Y., Jour. App. Phys. 41, 2780 (1970).CrossRefGoogle Scholar
7. Neave, J. H., Joyce, B.A., Dobson, P.J. and Norton, N., Appl. Phys. A 31, 1 (1983).Google Scholar
8. Chen, P., Lee, T.C., Cho, N.M. and Madhukar, A., Proceedings of SPIE Symposium on Growth of Compound Semiconductors, (March 26–27, 1987, Baypoint, Florida) To Appear.Google Scholar
9. Chen, P., Cho, N.M. and Madhukar, A. (Unpublished).Google Scholar
10. Thomsen, M., Ghaisas, S.V. and Madhukar, A., Jour. Cryst. Growth (In Press).Google Scholar
11. Green, J.E., Solid State Tech. (To appear) and references therein.Google Scholar
12. Veen, J.F. Van der, Surf. Sc. Rep. 5, 199 (1985).Google Scholar