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Role of Surface and Growth-Zone Reactions in the Formation Process of µc-Si:H

Published online by Cambridge University Press:  21 February 2011

A. Matsuda  and
T. Goto
A. Matsuda
Affiliation:
Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba-shi, Ibaraki 305, Japan
T. Goto
Affiliation:
Nagoya University, Fuoi-cho, Chigusa-ku, Nagoya 464-01, Japan
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Abstract

The role of the surface reaction is discussed in the formation process of µc-Si:H in comparison to that of a-Si:H. It is suggested that the responsible radicals for the formation of µc-Si:H are SiH3 as same in the case of a-Si:H depositions. On the top film-growing surface, a lot of H atoms reach the surface during the course of the μc-Si:H growth giving rise to the change in the surface condition, i. e. the loss probability of SiH3 radicals is increased. At the same time, a full H-coverage of the surface is expected which enhances the surface diffusion of SiH3 radicals, leading to the appearance of a gc nucleus. Moreover, it is speculated that the reaction in the growth zone is not necessary for the nucleation process in µc-Si:H.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 164: Symposium H – Materials Issues in Microcrystalline Semiconductors , 1989 , 3
Copyright
Copyright © Materials Research Society 1990

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References

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