Hostname: page-component-586b7cd67f-g8jcs Total loading time: 0 Render date: 2024-11-29T07:26:16.136Z Has data issue: false hasContentIssue false
  • English
  • Français

The Role of Structural Inhomogeneities on the Transport Properties of a-SiGe:H

Published online by Cambridge University Press:  26 February 2011

C. M. Fortmann
C. M. Fortmann*
Affiliation:
Solarex Corporation, Thin Film Division, 826 Newtown-Yardley Road, Newtown, PA 18940
Get access

Abstract

The defects that result from light soaking a-Si Ge :H are studied over the alloy range 0<X<0.4. These defects act as recomdinltion centers with a large hole capture cross section. The creation rate for light-induced defects is independent of the Ge content for compositions investigated (x = 0 to 0.4). The transport changes that result from Ge incorporation do not result in the creation of a larger density of these centers; however, the electronic transport properties decrease with increasing Ge content. The possibility that this decrease is due to germanium clusters is explored.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 118: Symposium E – Amorphous Silicon Technology , 1988 , 691
Copyright
Copyright © Materials Research Society 1988

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Newton, J.L.,Wood, G. and Catalano, A., Proc. 19th IEEE PVSC,. 862–866 New Orleans, LA (1987).Google Scholar
2. Fortmann, C.M., Lange, S., Hicks, M. and Wronski, C.R., to be published.Google Scholar
3. Hack, M. and Shur, M.,J. Appl. Phys. 58 (4), (1985).Google Scholar
4. Mackenzie, K.D., Eggert, J.R., Leopold, D.J.,Li, Y.M. and Paul, W., Phys. Rev. B Vol.31, No. 4 (1985).Google Scholar
5. Yan, P.,Lichtin, N. and Morel, D., Appl. Phys. Lett. 50 (19) (1987).CrossRefGoogle Scholar
6. Smith, Z E., Aljishi, S., Chu, V., Condo, J. and Wagner, S., Tech. Dig. Int'l. PVSEC-3, Tokyo, Japan (1987).Google Scholar
7. Filippone, A., Fiorini, P., Evangelisti, F.,Balerna, A. and Mobilio, S., Proc. 7th EC PVSEC, 1202–1204, Seville, Spain (1986).Google Scholar
8. Wronski, C.R.,Persans, P.D. and Abeles, B., Appl. Phys. Lett. 49, 569 (1986).Google Scholar
9. Wronski, C.R. and Hicks, M., Jap. Journ. Appl. Phys., Vol.26 no. 2, (1987) p. L105–L107.Google Scholar
10. Sette, F., Abeles, B., Yang, L., McDowell, A., Norman, D., Richardson, C.H., J. Non-Cryst. Solids 97&98 (1987) p. 895–898, North-Holland, Amsterdam.Google Scholar
11. Abeles, B. and Tiedje, T., Phys. Rev. Lett. 51 (1983) 2003.Google Scholar
12. Persans, P., Abeles, B., Scanlon, J. and Stasiewski, H., Proc. 17th Int'l. Conf. Phys. of Semiconductors eds. Chadi, J.D. and Harrison, W.A. (Springer-Verlag, NY, 1985) 499.Google Scholar
13. Abeles, B., Tiedje, T., Liang, K.S., Stasiewski, H.E., Scanlon, J.C. and Eisenberger, P.M., J. Non-Cryst. Solids 66, 35 (1984).Google Scholar
14. Fortmann, C.M., O'Dowd, J., Newton, J. and Fischer, J., ”Stability of a-Si Alloy Materials ”, Stafford, B.L. and Sabisky, E. Eds., AIP Conf. Proc. 157, AIP, NY (1987).Google Scholar
15. Hack, M. and Shur, M., Vol. J. Appl. Phys. 58 (2) (1985).Google Scholar
16. Mackenzie, K.D., Burnett, J.H., Eggert, J.R., Li, Y.M., and Paul, W. to be published.Google Scholar
17. Wronski, C.R. “Semiconductors and Semimetals Volume 21, part C”, Pankove, J.I. Ed., p. 351 Academic Press, NY (1984).Google Scholar