Hostname: page-component-cd9895bd7-gbm5v Total loading time: 0 Render date: 2024-12-27T01:31:29.567Z Has data issue: false hasContentIssue false

The role of strain in low-field magnetotransport properties of manganite thin films

Published online by Cambridge University Press:  10 February 2011

Y. F. Hu
Affiliation:
Department of Physics, Pennsylvania State University, University Park, PA 16802
H. S. Wang
Affiliation:
Department of Physics, Pennsylvania State University, University Park, PA 16802
E. Wertz
Affiliation:
Department of Physics, Pennsylvania State University, University Park, PA 16802
Qi Li
Affiliation:
Department of Physics, Pennsylvania State University, University Park, PA 16802
Get access

Abstract

Strain-induced large low-field magnetoresistance has been observed in very thin Pr0.67Sr0.33MnO3 films1. To better understand the role of strain in the low-field magnetotransport properties of manganite thin films, we have studied and compared very thin (3-20 nm) Pr0.67Sr0.33MnO3 (PSMO), La0.67Ba0.33MnO3 (LBMO), La0.67Sr 0.33MnO3 (LSMO) and La0.67Ca0.33MnO3 (LCMO) films grown on different substrates, such as LaAlO3(001) (LAO), NdGaO3(110) (NGO), and SrTiO3(001) (STO). Due to the lattice mismatch between the films and the substrates ranging from -2.6% to +1%, different strains can be imposed to the films. We have found that: (1) large low-field magnetoresistance(LFMR) behaviors are observed in PSMO, LCMO and LSMO thin films on LAO substrates when a magnetic field is applied perpendicular to the film plane, but the maximum LFMR is the largest in PSMO and LCMO samples; (2) most of the films grown on STO substrates show positive MR when a magnetic field is applied perpendicular to the film plane, and when the field is parallel to the film plane all films show negative MR regardless of the substrates; (3) the large low-field MR is strongly dependent on the film thickness and the composition of the manganites. The anomalous low-field MR effect will be discussed based on strain-induced magnetic anisotropy and domain rotation and movement.

Type
Research Article
Copyright
Copyright © Materials Research Society 2000

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Wang, H. S. and Li, Qi, Appl. Phys. Lett. 73, 2360 (1998).Google Scholar
2. Wang, H. S., Li, Qi, Liu, Kai, and Chien, C. L., Appl. Phys. Lett. 74, 2212 (1999).Google Scholar
3. Xu, X. W., Rzchowski, M. S., Wang, H. S., and Li, Qi, submitted to Phys. Rev. B.Google Scholar
4. Wang, H. S., Wertz, E., Hu, Y.F., Li, Qi, and Schlom, D., submitted to J. Appl. Phys.Google Scholar
5. O'Donnell, J., Rzchowski, M. S., Eckstein, J. N. and Bozovic, I., Appl. Phys. Lett. 72, 1175 (1998).Google Scholar
6. Eckstein, J. N., Bozovic, I., O'Donnell, J., Onellion, M., and Rzchowski, M. S., Appl. Phys. Lett. 69, 1312 (1996).Google Scholar