Hostname: page-component-cd9895bd7-gbm5v Total loading time: 0 Render date: 2024-12-27T01:56:06.872Z Has data issue: false hasContentIssue false
  • English
  • Français

The Role of Sn, Zr and Hf in the Radiation Damage in II, III, IV and V Pyrochlores

Published online by Cambridge University Press:  30 March 2012

Karl R. Whittle ,
Massey de los Reyes ,
Mark G. Blackford ,
Nestor J. Zaluzec  and
Gregory R. Lumpkin
Karl R. Whittle
Affiliation:
Institute of Materials Engineering, ANSTO, Locked Bag 2001, Kirrawee DC, NSW 2232, Australia
Massey de los Reyes
Affiliation:
Institute of Materials Engineering, ANSTO, Locked Bag 2001, Kirrawee DC, NSW 2232, Australia
Mark G. Blackford
Affiliation:
Institute of Materials Engineering, ANSTO, Locked Bag 2001, Kirrawee DC, NSW 2232, Australia
Nestor J. Zaluzec
Affiliation:
Materials Science Division, Argonne National Laboratory, 9700 South Cass Avenue, Argonne, IL 60439, USA
Gregory R. Lumpkin
Affiliation:
Institute of Materials Engineering, ANSTO, Locked Bag 2001, Kirrawee DC, NSW 2232, Australia
Get access

Abstract

Ceramics based on the general compositions CaLnXNbO7 (where Ln = La, Nd and Sm, and X=Zr and Sn) have been prepared, and irradiated with 1 MeV Kr ions at the IVEM-TANDEM user facility. The radiation tolerance of these materials has been found to be less than Zr and Hf equivalents. The results also suggest that the amorphisation cross section for these materials is related to the Ln component, and is similar to those observed for Zr and Hf equivalents.

Keywords

radiation effectstransmission electron microscopy (TEM)ion-beam processing
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1383: Symposium A – Material Challenges in Current and Future Nuclear Technologies , 2012 , mrsf11-1383-a02-07
Copyright
Copyright © Materials Research Society 2012

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Hobbs, L., Clinard, F., Zinkle, S. and Ewing, R., Journal of Nuclear Materials, 216, 291–321 (1994)Google Scholar
2. Weber, W. J., Ewing, R. C., Catlow, C. R. A., Diaz de la Rubia, T., Hobbs, L. W., Kinoshita, C., Matzke, H., Motta, A. T., Nastasi, M., Salje, E. K. H., Vance, E. R. and Zinkle, S. J., Journal of Materials Research, 13, 1434–1484 (1998)Google Scholar
3. Whittle, K. R., Lumpkin, G. R., Blackford, M., Aughterson, R. D., Smith, K. L. and Zaluzec, N. J., Journal of Solid State Chemistry, 183, 2416–2420 (2010)Google Scholar
4. Lumpkin, G. R., Smith, K. L., Blackford, M., Whittle, K. R., Harvey, E. J., Redfern, S. A. T. and Zaluzec, N. J., Chemistry of Materials, 21, 2746–2754 (2009)Google Scholar
5. Whittle, K. R., Cranswick, L. M. D., Redfern, S. A. T., Swainson, I. P. and Lumpkin, G. R., Journal of Solid State Chemistry, 182, 442–450 (2009)Google Scholar
6. Subramanian, M. A., Aravamudan, G. and Subba Rao, G. V., Progess in Solid State Chemistry, 15, 55–143 (1983)Google Scholar
7. Allen, C. W., Funk, L. R. and Ryan, E. A., in Ion Solid Interaction for Materials Modification and Processing, edited by Poker, D. B., Ila, D., Cheng, Y. T., Lloyd, R. H. and Sigmon, T. W., (Mater. Res. Soc. Symp. Proc., 396, Pittsburgh, PA, 1996) 641–646 Google Scholar
8. Wang, S. X., Wang, L. and Ewing, R. C., Materials Research Society Symposium Proceedings, 504, 165–170 (1997)Google Scholar
9. Lumpkin, G. R., Whittle, K. R., Rios, S., Smith, K. L. and Zaluzec, N., Journal of Physics: Condensed Matter, 16, 8557–8570 (2004)Google Scholar
10. Ewing, R. C., Lian, J. and Wang, L., Materials Research Society Symposium Proceedings, 792, R2.1.1 (2004)Google Scholar
11. Shannon, R. and Prewitt, C., Acta Crystallographica Section B: Structural Crystallography and Crystal Chemistry, 26, 1046–1048 (1970)Google Scholar
12. Whittle, K. R., Lumpkin, G. R., Smith, K. L., Blackford, M., Harvey, E. J. and Zaluzec, N. J., Scientific Basis for Nuclear Waste Management XXX, 985, 0985–NN09-02 (2006)Google Scholar