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Role of Silver Doping in the Improvement of Electrical Properties of (Ba,Sr)TiO3 Thin Films

Published online by Cambridge University Press:  10 February 2011

Anuranjan Srivastava ,
D. Kumar ,
Rajiv K. Singh ,
Harish Venkataraman  and
William R. Eisenstadt
Anuranjan Srivastava
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611-6400
D. Kumar
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611-6400
Rajiv K. Singh
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611-6400
Harish Venkataraman
Affiliation:
Department of Electrical and Computer Engineering, University of Florida, Gainesville, Florida 32611
William R. Eisenstadt
Affiliation:
Department of Electrical and Computer Engineering, University of Florida, Gainesville, Florida 32611
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Abstract

In this paper we report the fabrication and characterization of Ag/(Ba,Sr)TiO3 /LaNiO3/LaAlO3 capacitors. All the films, including the top (silver) and bottom (LaNiO3) electrodes, were deposited using a pulsed laser deposition technique. The electrical and dielectric properties of (Ba,Sr)TiO3 capacitors were found to improve significantly by means of silver doping. For example, the leakage current density of a Ag/Ag-doped-(Ba,Sr)TiO3 /LaNiO3/ capacitor was about an order of magnitude lower and dielectric constant was ∼40 % higher than that of a Ag/(Ba,Sr)TiO3 /LaNiO3/capacitor over a range of biases. The improvement in the electrical properties of (Ba,Sr)TiO3 films is believed to be caused by a double role of silver. The first one is associated with the reduced oxygen vacancies due to improved oxygenation of BST films in presence of silver and the second one is associated unpinning effect of domain walls again in presence of silver.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 567: Symposium R – Ultrathin SiO2 and Higg-K Materials for ULSI Gate Dielectrics , 1999 , 463
Copyright
Copyright © Materials Research Society 1999

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References

REFERENCES

1 Ferrolectric Thin Films VI, Ed. Treece, R. E., Jones, R.E., Foster, C.M., Desu, S.B., and In Yoo, K., Mat. Res. Symp. Proc. 493, (1998).Google Scholar
2 Ferrolectric Thin Films VI, Ed. Tuttle, B., Desu, S.B., Ramesh, R., and Shiosaki, T., Mat. Res. Symp. Proc. 361, (1995).Google Scholar
3 Jones, R.E., Solid State Technol. P.201, October 1997.Google Scholar
4 Grossmann, M., Hoffmann, S., Gusowski, S., Waser, R., Streiffer, S.K., Basceri, C., Parker, C.B., Lash, S.E., and Kingon, A.I., Integ. Ferroelectr. 22, 83 (1998).10.1080/10584589808208032Google Scholar
5 Joshi, P.C. and Krupanidhi, S.B., J. Appl. Phys. 73, 7627 (1993).10.1063/1.353960Google Scholar
6 Lee, Won- Jae, Basceri, C., Streiffer, S.K., Kingon, A.I., Doo-Young Yang, Park, Y., Kim, Ho-Gi, Thin Solid Films 323 285 (1989).10.1016/S0040-6090(97)01043-2Google Scholar
7 Zafar, S., Jones, R.E., Jiang, B., White, B., Chu, P., Taylor, D., and Gillespie, S., Appl. Phys. Lett. 73, 175 (1998).10.1063/1.121746Google Scholar
8 Cho, Hag-Ju, Oh, S., Kang, C.S., Hwang, C. S., Lee, B. T., Lee, K. H., Horri, H., Lee, S. I., and Lee, M.Y., Appl. Phys. Lett. 71, 3221 (1997).10.1063/1.120296Google Scholar
9 Dietz, G.W., M, Schumacher, Waser, R., Streiffer, S.K., Basceri, C., and Kingon, A.I., J. Appl. Phys. 85, 2359 (1997).10.1063/1.366045Google Scholar
10 Hwang, C.S., and Joo, S.H., J. Appl. Phys. 85, 2431 (1999).10.1063/1.369562Google Scholar
11 Basceri, C., Streiffer, S.K., Kingon, A.I., Waser, R., J.Appl. Phys. 85, 2497 (1997).10.1063/1.366062Google Scholar
12 Srivastava, A., Kumar, D., and Singh, R. K., J. Electctro. Chem. Lett. (in press).Google Scholar
13 Lee, W. J., Park, I.K., Jang, G.E., and Kim, H.G., Jpn. J. Appl. Phys. 34, 196 (1995).10.1143/JJAP.34.196Google Scholar
14 Pinto, R., Apte, P.R., Adhi, K.P., Ogale, S.B., Hegde, M.S., and Kumar, D., J. Appl. Phys. (1995).Google Scholar
15 Kumar, D., Sharon, M., Pinto, R., Apte, P.R., Purandare, S.C., Pai, S.P., Gupta, L.C., Vijayaraghavan, R., Appl. Phys. Lett. 62,(1993).Google Scholar
16 Kumar, D., Apte, P.R., and Pinto, R., J. Appl. Phys. (1995).Google Scholar
17 AI-Shareef, H.N., Tuttle, B.A., Warren, W.L., Dimos, D., Raymond, M.V., and Rodriguez, M.A., Appl. Phys. Lett. 68, 272 (1996).10.1063/1.115660Google Scholar
18 Gopalan, V., Raj, R., Mat. Res. Symp. Proc. 493, 75 (1998).10.1557/PROC-493-75Google Scholar
19 Hart, C., Ares, O., Pena, I.L., Bartolo-Perez, P., Sosa, V., Cauich, W., Hirata, G.A., Cota-Araiza, L., and Farias, M.H., Appl. Phys. Lett. 67, 2078 (1995).10.1063/1.115084Google Scholar