Crossref Citations
This article has been cited by the following publications. This list is generated based on data provided by Crossref.
Libertino, S.
Coffa, S.
Franzó, G.
and
Priolo, F.
1995.
The effects of oxygen and defects on the deep-level properties of Er in crystalline Si.
Journal of Applied Physics,
Vol. 78,
Issue. 6,
p.
3867.
Hirschman, K. D.
Tsybeskov, L.
Duttagupta, S. P.
and
Fauchet, P. M.
1996.
Integrating Bipolar Junction Transistors with Silicon-Based Light-Emitting Devices.
MRS Proceedings,
Vol. 452,
Issue. ,
Hirschman, K. D.
Tsybeskov, L.
Duttagupta, S. P.
and
Fauchet, P. M.
1996.
Silicon-based visible light-emitting devices integrated into microelectronic circuits.
Nature,
Vol. 384,
Issue. 6607,
p.
338.
Zappe, H.P.
and
Hofstetter, D.
1996.
A monolithic optical displacement measurement microsystem.
p.
400.
Lockwood, David J.
1997.
Light Emission in Silicon: From Physics to Devices.
Vol. 49,
Issue. ,
p.
1.
Lockwood, D. J.
1998.
Nanoscale Science and Technology.
p.
185.
Stoica, T.
Vescan, L.
and
Goryll, M.
1998.
Electroluminescence of strained SiGe/Si selectively grown above the critical thickness for plastic relaxation.
Journal of Applied Physics,
Vol. 83,
Issue. 6,
p.
3367.
Zhu, M
Han, Y
Godet, C
and
Wehrspohn, R.B
1999.
Photoluminescence from hydrogenated amorphous silicon oxide thin films.
Journal of Non-Crystalline Solids,
Vol. 254,
Issue. 1-3,
p.
74.
Das, B.
McGinnis, S.
and
Sines, P.
2001.
Nanostructure based electro-optic modulators for high speed optical interconnects.
Vol. 1,
Issue. ,
p.
517.
Lockwood, David J.
2005.
Spectroscopy of Emerging Materials.
Vol. 165,
Issue. ,
p.
97.
Lockwood, David J.
2009.
Light emission in silicon nanostructures.
Journal of Materials Science: Materials in Electronics,
Vol. 20,
Issue. S1,
p.
235.
Li, B.S.
Zhang, C.H.
Wang, Z.G.
Zhong, Y.R.
Wang, B.Y.
Qin, X.B.
Zhang, L.Q.
Yang, Y.T.
Wang, R.
and
Jin, Y.F.
2013.
Effects of annealing temperature on buried oxide precipitates in He and O co-implanted Si.
Vacuum,
Vol. 93,
Issue. ,
p.
22.