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The Role of Si-H, Si-H2 and Oxygen in the Photoluminescence of Porous Si.

Published online by Cambridge University Press:  28 February 2011

J. M. Lavine  and
A. J. Bellezza
J. M. Lavine
Affiliation:
Electrical Engineering Department and S.P. Sawan and Y-T. Shieh, Chemistry Department, University of Massachusetts Lowell, One University Avenue, Lowell MA 01854.
A. J. Bellezza
Affiliation:
Electrical Engineering Department and S.P. Sawan and Y-T. Shieh, Chemistry Department, University of Massachusetts Lowell, One University Avenue, Lowell MA 01854.
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Abstract

We have observed no correlation between the presence or absence of the FTIR spectral lines at 669 and 2089 cm-1 (Si-H) and at 912 and 2112 cm-1(Si-H2) and the photoluminescent output of porous Si. We have observed no correlation between the presence or absence of PL output and the growth of the Si-O-Si line at 1105 cm-1. As a result we suggest that surface passivation plays no role in the PL output. We also suggest that the growth of the Si-O-Si line at 1105 cm-1under photo-oxidative conditions results in the alteration of the backbone of a Si-backboned species and not in the attachment of O at the surface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 283: Symposium F – Microcrystalline Semiconductors–Materials Science and Devices , 1992 , 293
Copyright
Copyright © Materials Research Society 1993

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References

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