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Role of polarization in the photoluminescence of C- and M-plane oriented GaN/AlGaN multiple quantum wells

Published online by Cambridge University Press:  11 February 2011

E. Kuokstis ,
C. Q. Chen ,
M. E. Gaevski ,
W. H. Sun ,
J. W. Yang ,
G. Simin ,
M. Asif Khan ,
H. P. Maruska ,
D. W. Hill  and
M. M. C. Chou
...Show all authors
E. Kuokstis
Affiliation:
Department of Electrical Engineering, University of South Carolina, Columbia, SC 29208, U.S.A.
C. Q. Chen
Affiliation:
Department of Electrical Engineering, University of South Carolina, Columbia, SC 29208, U.S.A.
M. E. Gaevski
Affiliation:
Department of Electrical Engineering, University of South Carolina, Columbia, SC 29208, U.S.A.
W. H. Sun
Affiliation:
Department of Electrical Engineering, University of South Carolina, Columbia, SC 29208, U.S.A.
J. W. Yang
Affiliation:
Department of Electrical Engineering, University of South Carolina, Columbia, SC 29208, U.S.A.
G. Simin
Affiliation:
Department of Electrical Engineering, University of South Carolina, Columbia, SC 29208, U.S.A.
M. Asif Khan
Affiliation:
Department of Electrical Engineering, University of South Carolina, Columbia, SC 29208, U.S.A.
H. P. Maruska
Affiliation:
Crystal Photonics, Inc., Sanford, FL 32773, U.S.A.
D. W. Hill
Affiliation:
Crystal Photonics, Inc., Sanford, FL 32773, U.S.A.
M. M. C. Chou
Affiliation:
Crystal Photonics, Inc., Sanford, FL 32773, U.S.A.
J. J. Gallagher
Affiliation:
Crystal Photonics, Inc., Sanford, FL 32773, U.S.A.
B. H. Chai
Affiliation:
Crystal Photonics, Inc., Sanford, FL 32773, U.S.A.
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Abstract

The comparative study of photoluminescence (PL) dynamics of wurtzite-type GaN/AlGaN multiple quantum wells (MQWs) fabricated using low-pressure metalorganic chemical vapor deposition technique over GaN coated [0001]-sapphire (C-plane) and single crystalline [1100]-oriented freestanding GaN (M-plane) substrates is presented. The MQWs on C-plane sapphire at low excitation exhibited much lower (∼30 times) PL intensity in comparison with M-plane samples. The C-plane MQWs showed a strong excitation intensity-induced PL spectrum line blueshift (up to 140 meV). Meanwhile identical MQW structures on M-plane substrates demonstrated no PL peak shifts indicating an absence of polarization fields. At higher excitation (>50 kW/cm2) the PL intensity and spectra peak positions for both the C- and the M-plane MQWs become nearly the same and do not differ with subsequent increase of pumping. Theoretical analysis and comparison with PL experimental data revealed strong (up to ∼1.2–1.3 MV/cm) built-in electrostatic fields in the C-plane structures whereas M-plane structures are almost non-polar.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 743: Symposium L – GaN and Related Alloys , 2002 , L5.3
Copyright
Copyright © Materials Research Society 2003

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References

REFERENCES

1. Bernardini, F., Fiorentini, V., and Vanderbilt, D., Phys. Rev. B 56, R10024 (1997).Google Scholar
2. Im, J. S., Kollmer, H., Off, J., Sohmer, A., Scholz, F., and Hangleiter, A., Phys. Rev. B 57, R9435 (1998).Google Scholar
3. Vaschenko, G., Patel, D., Menoni, C. S., Gardner, N. F., Sun, J., Götz, W., Toné, C. N., and Clausen, B., Phys. Rev. B 64, 241308 (2001).Google Scholar
4. Northrup, J. E. and Neugebauer, J., Phys. Rev. B 53, R10477 (1996).Google Scholar
5. Cingolani, R., Botchkarev, A., Tang, H., and Markoç, H., Phys. Rev. B 61, 2711 (2000).Google Scholar
6. Palmer, D. W., www.semiconductors.co.uk, 2001.04.Google Scholar
7. Jain, S. C., Willander, M., Narayan, J., and Van Overstraeten, R., J. Appl. Phys. 87, 965 (2000).Google Scholar
8. Dmitriev, A. and Oruzheinikov, A., J. Appl. Phys. 86, 3241 (1999).Google Scholar
9. Weisbuch, C., Vinter, B., Quantum Semiconductor Structures, Academic Press, 1991.Google Scholar
10. Brinkman, W.F. and Rice, T.M., Phys. Rev. B, 7, 1508 (1973).Google Scholar
11. Ng, H. M., Appl. Phys. Lett. 80, 4369 (2002).Google Scholar