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The Role of Nitrogen-Induced Localization and Defects in InGaAsN (? 2% N): Comparison of InGaAsN Grown by Molecular Beam Epitaxy and Metal-Organic Chemical Vapor Deposition

Published online by Cambridge University Press:  21 March 2011

Steven R Kurtz ,
A. A. Allermana ,
J. F. Klem ,
R. M. Sieg ,
C. H. Seager  and
E. D. Jones
Steven R Kurtz
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185-0601
A. A. Allermana
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185-0601
J. F. Klem
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185-0601
R. M. Sieg
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185-0601
C. H. Seager
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185-0601
E. D. Jones
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185-0601
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Abstract

Nitrogen vibrational mode spectra, Hall mobilities, and minority carrier diffusion lengths are examined for InGaAsN (≈ 1.1 eV bandgap) grown by molecular beam epitaxy (MBE) and metal-organic chemical vapor deposition (MOCVD). Independent of growth technique, annealing promotes the formation of In-N bonding, and lateral carrier transport is limited by large scale (Ęmean free path ) material inhomogeneities. Comparing solar cell quantum efficiencies for devices grown by MBE and MOCVD, we find significant electron diffusion in the MBE material (reversed from the hole diffusion occurring in MOCVD material), and minority carrier diffusion in InGaAsN cannot be explained by a “universal”, nitrogen-related defect.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 692: Symposium H – Progress in Semiconductor Materials for Optoelectronic Applications , 2001 , H1.7.1
Copyright
Copyright © Materials Research Society 2002

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