Hostname: page-component-cd9895bd7-jn8rn Total loading time: 0 Render date: 2024-12-27T02:18:13.929Z Has data issue: false hasContentIssue false
  • English
  • Français

The Role of Low-Energy Ion/Surface Interactions During Crystal Growth From the Vapor Phase

Published online by Cambridge University Press:  28 February 2011

J. E. Greene ,
A. Rockett  and
J.-E. Sundgren
J. E. Greene
Affiliation:
Materials Science Department, the Coordinated Science Laboratory andthe Materials Research Laboratory University of Illinois, Urbana, Illinois, 61801
A. Rockett
Affiliation:
Materials Science Department, the Coordinated Science Laboratory andthe Materials Research Laboratory University of Illinois, Urbana, Illinois, 61801
J.-E. Sundgren
Affiliation:
Materials Science Department, the Coordinated Science Laboratory andthe Materials Research Laboratory University of Illinois, Urbana, Illinois, 61801
Get access

Abstract

Low-energy (often < 100 eV) ion bombardment during thin film deposition is commonly used in such diverse application areas as microelectronics, optical coatings. magnetic recording layers. and hard wear resistant coatings to modify the microstructure and microchemistry of films deposited by a variety of techniques (e.g. sputtering, primary ion deposition, plasma-assisted CVD, and accelerated-beam MBE). Ion irradiation has been shown to affect every phase of deposition including nucleation and growth kinetics, crystal structure and phase stability, the average grain size and degree of preferred orientation of polycrystalline films, the epitaxial temperature of single-crystal films, defect concentrations, elemental incorporation probabilities, surface segregation, and, hence, film properties. As discussed in this brief review, a detailed understanding of many of these processes is beginning to emerge. Effects such as trapping, preferential sputtering, enhanced diffusion, and collisional mixing have been used to interpret and, in some cases, model experimental results. Nevertheless, there are still large gaps in our knowledge of the role of ion bombardment on fundamental processes such as nucleation kinetics.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 74: Symposium A – Beam-Solid Interactions and Transient Processes , 1986 , 59
Copyright
Copyright © Materials Research Society 1987

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Greene, J.E.. J. Vac. Sci. Technol. 1, 229 (1983).Google Scholar
[2] Barnett, S.A.. Kramer, B., Romano, L.T., Shah, S.I., Ray, M.A., Fang, S., and Greene, J.E., “A Review of Recent Results on Single Crystal Metastable Semiconductors: Crystal Growth, Phase Stability and Physical Properties,” in Layered Structures, Epitaxy, and Interfaces, ed. by Gibson, J.M. and Dawson, L.R., (North Holland Publishing Co., 1985). p. 285.Google Scholar
[3] Greene, J.E.. Motooka, T.. Sundgren, J.-E., Rockett, A., Gorbatkin, S., Lubben, D.. and Barnett, S.A.. J. Crystal Growth, in press.Google Scholar
[4] Greene, J.E. and Barnett, S.A., J. Vac. Sci. Technol. 21, 285 (1982).Google Scholar
[5] Greene, J.E.. CRC Critical Reviews of Solid State and Materials Science 11, 47 (1983).Google Scholar
[6] Wehner, G.K. and Anderson, G.S., in Handbook of Thin Film Technology, edited by Maissel, L.I. and Glang, R.. (McGraw-Hill. New York, 1970). Chap. 3.Google Scholar
[7] Donahue, T.J. and Reif, R., Semiconductor International. 142, August. 1985.Google Scholar
[8] Krikorian, E. and Sneed, R.J.. Astrophys. Space Sci. 65, 129 (1979).Google Scholar
[9] Chapman, B.N. and Campbell, D.S.. J. Phys. C2, 200 (1969).Google Scholar
[10] Lane, G.E. and Anderson, J.C.. Thin Solid Films 26,5 (1975).Google Scholar
[11] Lane, G.E. and Anderson, J.C., Thin Solid Films 57, 277 (1979).Google Scholar
[12] Harsdorff, M. and Jark, W.. Thin Solid Films 128, 79 (1985).CrossRefGoogle Scholar
[13] Hasan, M.A.. Knall, J., Barnett, S.A., Sundgren, J.-E.. and Greene, J.E., unpublished.Google Scholar
[14] Rockett, A., Barnett, S.A., and Greene, J.E.. J. Vac. Sci. Technol. B2, 306 (1984).Google Scholar
[15] Knall, J.. Sundgren, J.-E., Hansson, G.V., and Greene, J.E.. Surf. Sci. 166, 512 (1986).Google Scholar
[16] Barnett, S.A.. Winters, H.F.. and Greene, J.E.. Surf. Si., in press.Google Scholar
[17] Barnett, S.A., Winters, H.F., and Greene, J.E.. Surf. Sci. 165, 303 (1986).Google Scholar
[18] See, for example, Marinov, M., Thin Solid Films 46, 267 (1977).Google Scholar
[19] Venables, J.A.. Spiller, G.D.T., and Hanbicken, M.. Rep. Prog. Phys. 47, 399 (1984).CrossRefGoogle Scholar
[20] Narusawa, T.. Shimizu, S., and Komiya, S., J. Vac. Sci. Technol. 16, 366 (1979).Google Scholar
[21] Thomas, G.E., Beckers, L.J., Vrakking, J.J.. and Koning, B.R. de. J. Cryst. Gr. 56,257 (1982).Google Scholar
[22] Zalm, P.C. and Beckers, L.J.. Appl. Phys. Lett. 41, 167 (1982).Google Scholar
[23] Yagi, K., Tamura, S.. and Tokuyama, T.., Japn. J. Appl. Phys. 16, 245 (1977).Google Scholar
[24] Tokuyama, T., Yagi, K.. Miyaki, K., Tamura, M., Natsuaki, N.. and Tachi, S.. Nucl. Instr. Meth. 182/183, 241 (1981).Google Scholar
[25] Muller, K.-H., Phys. Rev. B. in pressGoogle Scholar
[26] See, for example. Harper, J.M.E.. Cuomo, J.J., Cambino, R.J.. and Kaufman, H.R.. in Ion Bombardrnent of Surfaces, ed. by Auciello, O. and Kelly, R., Elsevier Press, Amsterdam (1984). and references therein.Google Scholar
[27] Thornton, J.A., Annual Rev. Mater. Sci. 7, 239 (1977).Google Scholar
[28] Helmersson, U., Sundgren, J.-E., and Greene, J.E.. J. Vac. Sci. Technol. A4, 500 (1986).Google Scholar
[29] Thornton, J.A. and Hoffman, D.W., J. Vac. Sci. Technol. 18, 203 (1981).Google Scholar
[30] Pan, A. and Greene, J.E., Thin Solid Films 78, 25 (1981).Google Scholar
[31] Huang, T.C.. Lim, G., Parmigiani, F., and Kay, E.. J. Vac. Sci. Technol. A3, 2161 (1985).Google Scholar
[32] Parmiagiani, F., Kay, E., Huang, T.C., Perrin, J., Jurich, M., and Swalin, J.D., Phys. Rev. B33, 879 (1986).Google Scholar
[33] Movchan, B.A. and Demschishin, A.V.. Phys. Met. Metallorg. 28, 83 (1969).Google Scholar
[34] Grovenor, C.R.M.. Hentzell, H.T.G.. and Smith, D.A., Acta. Metall. 32, 773 (1984).Google Scholar
[35] Thornton, J.A., J. Vac. Sci. Technol. 11, 666 (1974).Google Scholar
[36] Henderson, D.. Brodsky, M.H., and Chaudhari, P., Appl. Phys. Letters 25, 641 (1974).CrossRefGoogle Scholar
[37] Dirks, A.G. and Leamy, H.J.. Thin Solid Films 47,219 (1977).Google Scholar
[38] Netterfield, R.P.. Sainty, W.G., and Martin, P.J., Appl. Optics 24, 2246 (1985).Google Scholar
[39] Sundgren, J.-E.. Johansson, B.O., Hentzell, H.T.G.. and Karlsson, S.-E., Thin Solid Films 105, 385 (1983).CrossRefGoogle Scholar
[40] Müller, K.-H., J. Appl. Phys., in press.Google Scholar
[41] Müller, K.-H., Appl. Phys. A, in press.Google Scholar
[42] Martin, P.J., Netterfield, R.P., and Sainty, W.G., J. Appl. Phys. 55, 235 (1984).CrossRefGoogle Scholar
[43] Hultman, L., Helmersson, U., Barnett, S.A.. Sundgren, J.-E.. and Greene, J.E.. J. Appl. Phys.. in press.Google Scholar
[44] Sundgren, J.E., Johansson, B.O., Rockett, A.. Barnett, S.A., and Greene, J.E.. in Physics and Chemistry of Protective Coatings, edited by Sproul, W.D., Greene, J.E., and Thornton, J.A., (American Inst. Phys. Series 149. New York 1986). p. 95.Google Scholar
[45] Winters, H.F.. J. Chem. Phys. 44, 1472 (1966).Google Scholar
[46] Toth, L.E., “Transition Metal Nitrides and Carbides.” (Academic Press, New York. 1971).Google Scholar
[47] Cuomo, J.J. and Gambino, R.J.. J. Vac. Sci. Technol. 12, 79 (1979).CrossRefGoogle Scholar
[48] Harper, J.M.E. and Gambino, R.J., J. Vac. Sci. Technol. 16, 1901 (1979).Google Scholar
[49] Greene, J.E., Barnett, S.A.. Bajor, G., and Rockett, A.. Appl. Surf. Sci. 22/23, 520 (1985) and references therein.Google Scholar
[50] Rockett, A.. Barnett, S.A.. Knall, J.. Sundgren, J.-E.. and Greene, J.E., J. Vac. Sci. Technol. B 3, 855 (1985).Google Scholar
[51] Knall, J., Sundgren, J.-E.. Greene, J.E., Rockett, A., and Barnett, S.A., Appl. Phys. Letters 45, 689 (1984).Google Scholar
[52] Rockett, A.. Drummond, T.J.. Greene, J.E., and Morkoc, H., J. Appl. Phys. 53, 7085 (1982).Google Scholar
[53] Barnett, S.A. and Greene, J.E., Surf. Sci. 151, 67 (1985) and references therein.Google Scholar
[54] Greene, J.E., Barnett, S.A.. Bajor, G.. and Rockett, A., Appl. Surf. Sci. 22/23, 520 (1985).Google Scholar
[55] Barnett, S.A. and Greene, J.E.. Surf. Sci. 151, 67 (1985).Google Scholar
[56] Ota, Y.. J. Appl. Phys. 51, 1102 (1980).CrossRefGoogle Scholar
[57] Bajor, G. and Greene, J.E., J. Appl. Phys. 54, 1579 (1983).Google Scholar
[58] Rockett, A., Knall, J.. Hassan, M.A., Sundgren, J.-E.. and Greene, J.E., J. Vac. Sci. Technol. A4, 900 (1986).CrossRefGoogle Scholar
[59] Hirashita, N., Noël, J.-P., Rockett, A.. Knall, J.. Hasan, M., Barnett, S.A., Greene, J.E., and Sundgren, J.-E.. unpublished.Google Scholar
[60]. Jorke, H., Herzog, H-J., and Kibbel, H., Appl. Phys. Lett. 47, 511 (1985).Google Scholar
[61] Jorke, H. and Kibbel, H., J. Electrochem. Soc. 133, 744 (1986).Google Scholar
[62] Romano, L.. Sundgren, J.-E., Barnett, S.A.. and Greene, J.E.. Superlattices and Microstructures 2, 233 (1986).Google Scholar
[63] Shah, S.I., Greene, J.E.. Abels, L.L.. Yao, Q., and Raccah, P.. unpublished.Google Scholar
[64] Barnett, S.A., Ray, M.A.. Lastras, A., Kramer, B., Greene, J.E., Raccah, P.M., and Abels, L.L., Electron Lett. 81, 891 (1982).Google Scholar
[65] Cadien, K.C., Eltoukhy, A.H., and Greene, J.E.. Appl. Phys. Lett. 38, 773 (1981) and Vacuum 31, 253 (1981).Google Scholar
[66] Shah, S.I.. Cadien, K.C., and Greene, J.E.. J. Electronic Materials 11, 53 (1982) and L. Romano, S. Fang. and J.E. Greene. unpublished.Google Scholar
[67] Cadien, K.C.. Muddle, B.C., and Greene, J.E., J. Appl. Phys. 55, 4177 (1984).Google Scholar
[68] Krabach, T.N., Wada, N., Klein, M.V., Cadien, K.C., and Greene, J.E., Sol. St. Comm. 45, 895 (1983).Google Scholar
[69] Beserman, R., Greene, J.E., Klein, M.V., Krabach, T.N., Mcglinn, T.C., Romano, L.T., and Shah, S.I., Phys. of Semiconductors, Vol.17, (Springer-Verlag, New York 1985).Google Scholar
[70] Stern, E.A., Ellis, F., Kim, K., Romano, L.. Shah, S.I., and Greene, J.E., Phys. Rev. Lett. 54, 905 (1985).Google Scholar
[71] Shah, S.I., Kramer, B., Barnett, S.A., and Greene, J.E., J. Appl. Phys. 59, 1482 (1986).Google Scholar
[72] Greene, J.E., J. Vac. Sci. Technol.. in press.Google Scholar