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Role of Ions in Bias Enhanced Nucleation of Diamond

Published online by Cambridge University Press:  21 February 2011

J.M. Lannon Jr. ,
J.S. Gold  and
Cd. Stinespring
J.M. Lannon Jr.
Affiliation:
Department of Physics, West Virginia University, Morgantown, WV 26506
J.S. Gold
Affiliation:
Department of Physics, West Virginia University, Morgantown, WV 26506
Cd. Stinespring
Affiliation:
Department of Chemical Engineering, West Virginia University, Morgantown, WV 26506
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Abstract

Ion-surface interactions are thought to play a role in bias enhanced nucleation of diamond. To explore this hypothesis and understand the mechanisms, surface studies of hydrogen and hydrocarbon ion interactions with silicon and silicon carbide have been performed. the experiments were carried out at room temperature and used in-situ auger analyses to monitor the surface composition of thin films produced or modified by the ions. Ion energies ranged from 10 to 2000 eV. Hydrogen ions were found to modify silicon carbide thin films by removing silicon and converting the resulting carbon-rich layers to a mixture of sp2- and sp3-C. the interaction of hydrocarbon ions with silicon was shown to produce a thin film containing SiC-, sp2-, and sp3-C species. IN general, the relative amount of each species formed was dependent upon ion energy, fluence, and mass. the results of these studies, interpreted in terms of chemical and energy transfer processes, provide key insights into the mechanisms of bias enhanced nucleation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 388: Symposium Q – Film Synthesis and Growth Using Energetic Beams , 1995 , 177
Copyright
Copyright © Materials Research Society 1995

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