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Role of Interface Quality and Film Doping Density in Amorphous Si / Crystalline Si Heterojunctions for Photovoltaic Applications

Published online by Cambridge University Press:  01 February 2011

M. Farrokh Baroughi  and
S. Sivoththaman
M. Farrokh Baroughi
Affiliation:
Department of Electrical & Computer Engineering, University of Waterloo, Waterloo, Ontario, N2L 3G1, Canada
S. Sivoththaman
Affiliation:
Department of Electrical & Computer Engineering, University of Waterloo, Waterloo, Ontario, N2L 3G1, Canada
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Abstract

We have studied some key aspects of the (n+)a-Si/(p)c-Si heterojunction structures photovoltaic applications. The importance of the hetero-interface quality has been studied by both theoretical simulations and experimental characterization. The surface treatment prior to the film deposition is very critical. Even though H-plasma passivation can help passivate bulk defects in low quality Si, extreme care should be taken to avoid plasma induced surface damage which will result in a defective hetero-interface. Furthermore, (n+) a-Si films with different doping levels have also been characterized and their influence on the device performance has been studied.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 796: Symposium V – Critical Interfacial Issues in Thin Film Optoelectronic and Energy Conversion Devices , 2003 , V2.11
Copyright
Copyright © Materials Research Society 2004

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References

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