Hostname: page-component-586b7cd67f-dlnhk Total loading time: 0 Render date: 2024-11-25T18:03:08.606Z Has data issue: false hasContentIssue false

Role of Hydrogen Microstructure in Amorphous Silicon

Published online by Cambridge University Press:  21 February 2011

Sufi Zafar
Affiliation:
The James Franck Institute, The University of Chicago, Chicago IL 60637
E. A. Schiff
Affiliation:
Dept. of Physics, Syracuse University, Syracuse NY 13244
Get access

Abstract

A model for correlating the observed properties of hydrogenated amorphous silicon (a-Si:H) with the underlying hydrogen microstructure is reviewed. The model provides a unified description of defect equilibration, hydrogen evolution, rehydrogenation and hydrogen diffusion measurements.

Type
Research Article
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Biegelsen, D. K., Street, R. A., Tsai, C. C., and Knights, J. C., Phys. Rev. B20, 4839 (1979).CrossRefGoogle Scholar
[2] Jackson, W. B., Tsai, C. C. and Thompson, R., Phys. Rev. Lett. 64, 56 (1990).Google Scholar
[3] Xu, X., Okumura, A., Morimoto, A., Kumeda, M., and Shimizu, T., Phys. Rev. B38 8371 (1988).Google Scholar
[4] Smith, Z. E. and Wagner, S., in Amorphous Silicon and Related Materials, edited by Fritzsche, H. (World Scientific, Singapore, 1988), pg. 409.Google Scholar
[5] Zafar, Sufi and Schiff, E. A., J. Non-Cryst. Solids 114, 618 (1989).Google Scholar
[6] Street, R. A. and Winer, K., Phys. Rev. B 40, 6236 (1989).Google Scholar
[7] Kakalios, J., Street, R. A. and Jackson, W. B., Phys. Rev. Lett, 59, 1037 (1987).CrossRefGoogle Scholar
[8] Zafar, Sufi and Schiff, E. A., Phys. Rev. B40, 5235 (1989).CrossRefGoogle Scholar
[9] Zafar, Sufi and Schiff, E. A., Phys. Rev. Lett. 66, 1493 (1991).Google Scholar
[10] Lucovsky, G. and Pollard, W. B., in The Physics of Hydrogenated Amorphous Silicon II, ed. by Joannopoulos, J. D. and Lucovsky, G. (Springer-Verlag, 1984), pg. 301.Google Scholar
[11] Baum, J., Gleason, K. K., Pines, A., Garroway, A. N., and Reimer, J. A., Phys. Rev. Lett. 56, 1377 (1986).Google Scholar
[12] Eberhart, M. E., Johnson, K. H., and Adler, D., Phys. Rev. B26, 3138 (1982).Google Scholar
[13] Street, R. A., Hack, M., and Jackson, W. B., Phys. Rev. B35, 4209 (1988).Google Scholar
[14] Knights, J. C., in The Physics of Hydrogenated Amorphous Silicon I, ed. by Joannopoulos, J. D. and Lucovsky, G. (Springer-Verlag, Berlin, 1984.) pg. 5.CrossRefGoogle Scholar
[15] Reimer, J. A., Vaughan, R. W., Knights, J. C., Sol. State Comm. 37, 161 (1981).Google Scholar
[16] Carlson, D. E. and Magee, C. W., Appl. Phys. Lett. 33, 81 (1978).Google Scholar
[17] Ichimiya, T. and Fumichi, A., Int. J. Appl. Rad. Isotopes. 19, 573 (1968).Google Scholar