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The Role of Hydrogen in Laser Crystallized Polycrystalline Silicon

Published online by Cambridge University Press:  11 February 2011

N. H. Nickel  and
K. Brendel
N. H. Nickel
Affiliation:
Hahn-Meitner-Institut Berlin, Kekuléstr. 5, D-12489 Berlin, Germany.
K. Brendel
Affiliation:
Hahn-Meitner-Institut Berlin, Kekuléstr. 5, D-12489 Berlin, Germany.
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Abstract

Polycrystalline silicon produced by laser crystallization of hydrogenated amorphous silicon contains large amounts of residual hydrogen. This reservoir of hydrogen can be used to passivate additional grain boundary defects by annealing the specimens at low temperatures in vacuum. Information on hydrogen bonding is obtained from hydrogen diffusion measurements. Laser crystallization results in a pronounced increase of the hydrogen binding energy in the resulting poly-Si samples compared to the amorphous precursor material. Fully crystallized poly-Si contains H concentrations of up to 17 at.%.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 744: Symposium M – Progress in Semiconductors II–Electronic and Optoelectronic Applications , 2002 , M5.23
Copyright
Copyright © Materials Research Society 2003

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References

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