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The Role Of Ge In Cluster Formation In B And Bf2 Implanted Si Wafers After Ge Pre-Amorphization

Published online by Cambridge University Press:  01 February 2011

M. Alper Sahiner ,
Charles W. Magee ,
Daniel F. Downey ,
Edwin Arevalo  and
Joseph C. Woicik
M. Alper Sahiner
Affiliation:
Seton Hall University, Physics Department, South Orange, New Jersey 07746
Charles W. Magee
Affiliation:
Evans East, East Windsor, New Jersey 08520
Daniel F. Downey
Affiliation:
Varian Semiconductor Equipment Associates, Gloucester, Massachusetts 01930, National Institute of Standards and Technology, Gaithersburg, Maryland 20899
Edwin Arevalo
Affiliation:
Varian Semiconductor Equipment Associates, Gloucester, Massachusetts 01930, National Institute of Standards and Technology, Gaithersburg, Maryland 20899
Joseph C. Woicik
Affiliation:
Varian Semiconductor Equipment Associates, Gloucester, Massachusetts 01930, National Institute of Standards and Technology, Gaithersburg, Maryland 20899
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Abstract

Cluster formation in high dose B, BF2 implanted Si wafers is an important problem in silicon doping, since it is one of the leading causes of the electrical deactivation of the dopant. In this study, we used Ge pre-amorphized, ultra low energy B and BF2 implanted Si wafers in order to probe these clusters from a local structural point of view. Ge K-edge x-ray absorption spectroscopy (XAFS) is a powerful tool in obtaining local structural information around the Ge atom. The effects of different implant species with various implant doses and annealing conditions on the cluster formation are presented using Ge K-edge multi-shell XAFS analysis. The non-linear least-squares fits to the Ge K-edge Fourier Transformed (FT) XAFS data using calculated standards from multiple scattering simulations around the Ge atom reveal formed Ge-B clusters for the Rapid Thermal Processing (RTP) annealed wafers. The results also indicate the laser annealing process on the other hand is blocking the formation of these Ge induced Ge-B clusters.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 792: Symposium R – Radiation Effects and Ion Beam Processing of Materials , 2003 , R7.3
Copyright
Copyright © Materials Research Society 2004

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References

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