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Role of deep levels in DC current aging of GaN/InGaN Light-Emitting Diodes studied by Capacitance and Photocurrent Spectroscopy

Published online by Cambridge University Press:  01 February 2011

Antonio Castaldini ,
Anna Cavallini ,
Lorenzo Rigutti ,
Matteo Meneghini ,
Simone Levada ,
Gaudenzio Meneghesso ,
Enrico Zanoni ,
Volker Härle ,
Thomas Zahner  and
Ulrich Zehnder
Antonio Castaldini
Affiliation:
[email protected]
Anna Cavallini
Affiliation:
[email protected], University of Bologna, Physics, Italy
Lorenzo Rigutti
Affiliation:
[email protected], University of Bologna, Physics, Italy
Matteo Meneghini
Affiliation:
[email protected], University of Padova, Information Engineering, Italy
Simone Levada
Affiliation:
[email protected], University of Padova, Information Engineering, Italy
Gaudenzio Meneghesso
Affiliation:
[email protected], University of Padova, Information Engineering, Italy
Enrico Zanoni
Affiliation:
[email protected], University of Padova, Information Engineering, Italy
Volker Härle
Affiliation:
[email protected], Osram Opto Semiconductors, Germany
Thomas Zahner
Affiliation:
[email protected], Osram Opto Semiconductors, Germany
Ulrich Zehnder
Affiliation:
[email protected], Osram Opto Semiconductors, Germany
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Abstract

We present a combined Capacitance-Voltage (C-V), Deep Level Transient Spectroscopy (DLTS) and Photocurrent (PC) study of short-term instabilities of InGaN/GaN LEDs submitted to forward current aging tests at room temperature. C-V profiles detect changes consisting in apparent doping and/or charge concentration increase within the quantum wells. This increase is correlated to dramatic modifications in the DLTS spectrum when the reverse bias and filling pulse are properly adjusted in order to probe the quantum well region. The new distribution of the electronic levels detected by DLTS could explain the observed decrease in the light emission efficiency [1,2] of the device, as the deep levels generated during the stress may provide alternative recombination paths for free carriers. The photocurrent spectra do not change in shape during stress, although their amplitude slightly decreases. This is related to a decrease of the device yield, in this photodetector configuration, with increasing aging time. Thus, we can suggest that the introduction of new defect levels in the bulk material lowers the free carrier mobility.

Keywords

deep level transient spectroscopy (DLTS)nitrideoptoelectronic
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 892 , 2005 , 0892-FF12-11
Copyright
Copyright © Materials Research Society 2006

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References

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