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The Role of Charged Point Defects on the Diffusion Behavior of Silicon in GaAs

Published online by Cambridge University Press:  25 February 2011

Jeffrey J. Murray ,
Michael D. Deal  and
David A. Stevenson
Jeffrey J. Murray
Affiliation:
Department of Materials Science and Engineering Stanford University, Stanford CA 94305
Michael D. Deal
Affiliation:
Center For Integrated Systems Stanford University, Stanford CA 94305
David A. Stevenson
Affiliation:
Department of Materials Science and Engineering Stanford University, Stanford CA 94305
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Abstract

A multilayered Si doped MBE structure was used to study the effective diffusivity of Si and the results are modeled with an (n/ni)2 dependence over the temperature range of 750°C – 950°C. An activation energy, Ea′, of 4.0 eV is obtained which is higher than normally reported in the literature. This higher Ea′ value results from appropriate accounting of the temperature dependence of ni, which is often neglected in the expression for Deff. Si diffusion at a buried n+/n++junction of a MOCVD grown structure also follows an (n/ni)2 dependence. These results support a Fermi-level model of Si diffusion in GaAs and suggest that the local point defect chemistry of the GaAs, through Si doping, is responsible for this diffusion behavior, regardless of the proximity to the surface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 163: Symposium G – Impurities, Defects and Diffusion in Semiconductors: Bulk and Layered Structures , 1989 , 691
Copyright
Copyright © Materials Research Society 1990

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