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The Role of Atomic Hydrogen for Substrate Cleaning for Growth of CdTe Buffer Layers at Reduced Temperatures on Silicon, CdTe, and HgCdTe
Published online by Cambridge University Press: 10 February 2011
Abstract
Atomic hydrogen is shown to be efficacious for cleaning CdTe and HgCdTe substrates for subsequent CdTe growth by molecular beam epitaxy. While single crystal ZnTe and CdTe growth was obtained on Si substrates that underwent an ex-situ HF-based etch, only polycrystalline CdTe or ZnTe could be obtained on surfaces cleaned using an atomic hydrogen source. This result is possibly related to gas-phase transport of Te to the Si surface.
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- Copyright © Materials Research Society 1997
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