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The Role of Arginine as a Complexing Agent in Copper CMP

Published online by Cambridge University Press:  01 February 2011

Surya Sekhar Moganty  and
Ramanathan Srinivasan
Surya Sekhar Moganty
Affiliation:
[email protected], Indian Institute of Technology Madras, Chemical Engineering, Particle Science Laboratory, Chennai, Tamil Nadu, 600036, India
Ramanathan Srinivasan
Affiliation:
[email protected], Indian Institute of Technology Madras, Chemical Engineering, Particle Science Laboratory, Chennai, Tamil Nadu, 600036, India
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Abstract

Chemical mechanical polishing (CMP) of copper was investigated in hydrogen peroxide and arginine slurries. Arginine was found to be a complexing agent for the copper in peroxide based slurries, in the alkaline region. The copper polish rate was measured in a Struers LaboPol-5 and LaboForce-3 CMP polishing tool. Static etch rate experiments of copper discs (25.4 mm Dia × 10 mm) were carried in 200 ml beakers with different combinations of hydrogen peroxide and arginine concentrations. Peroxide concentration was varied from 0 to 10 vol%, while the arginine concentration was varied from 0 to 1 wt% for both static etch and polish rate experiments. Fumed silica used as the abrasive medium for polishing.

The electrochemical processes involved in oxidative dissolution of copper were investigated by the Tafel corrosion plots and OCP measurements, using the Princeton Applied Research potentiostat. Three electrode corrosion flat cell was used for the electrochemical measurements. Corrosion current density and open circuit potentials (OCP) were used to elucidate the oxidative behavior of peroxide and the complexing role of arginine. Surface characteristics of the polished copper surface were analyzed with the Digital Instruments NanoScope AFM. Polishing with these chemicals resulted in smooth finish.

These results indicated that the arginine curtails the formation of oxidative layer on the copper surface and the removal rate was increased by forming complex with the copper.

Keywords

CMPCumicroelectronics
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 914: Symposium F – Materials, Technology and Reliability of Low-k Dielectrics and Copper Interconnects , 2006 , 0914-F12-03
Copyright
Copyright © Materials Research Society 2006

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References

References:

1 Steigerwald, J.M., Murarka, S.P., Guttaman, R.J., and Duquette, D.J., Mat. Chem. and Phys. 21, 217–228 (1995).Google Scholar
2 Carpio, Ronald, Farkas, Janos, and Jairath, Rahul, Thin Solid Films, 266, 238–244, (1995).Google Scholar
3 Stavreva, Z., Zeidler, D., PloStner, M., and Drescher, K., Appl Surf Sci, 91,192–196, (1995).Google Scholar
4 Hariharaputhiran, M., Zhang, J., Ramarajan, S., Keleher, J. J., Li, Yuzhuo, and Babu, S.V., J. Electrochem. Soc. 147(10), 3820–38266 (2000).Google Scholar
5 Aksu, Serdar, Wang, Ling, and Fiona, Doyle, M., J. Electrochem. Soc. 150 (11), G718–G723 (2003).Google Scholar
6 Seal, S., Kuiry, S. C., and Heinmen, B., Thin Solid Films. 423, 243–2510 (2003).Google Scholar
7 Y. Ein-Eli, Abelev, E., and Starosvetsky, D., Electrochimica Acta. 49, 1499–1503 (2004).Google Scholar
8 Hu, T. C., Chiu, S.Y., Dai, B.T., Tsai, M.S., Tung, I.-C., and Feng, M. S., Mat. Chem. and Phys. 61, 169–171 (1999).Google Scholar
9 Sekhar, M. Surya and Ramanathan, S., Thin Solid Films, 504, 227–230 (2006).Google Scholar
10 Luo, Q., Campbel, D.R., and Babu, S.V., Thin Solid Films, 311,177–182 (1997).Google Scholar
11 Her, Y-S, Srinivasan, R., Babu, S.V. and Ramarajan, S., US Patent No. 6,702,954 (2004).Google Scholar
12 Du, T., Tamboli, D., Luo, Y., and Desai, V., Appl. Surf. Sci. 229(1-4), 167–174 (2004).Google Scholar
13 Du, T., Tamboli, D., Desai, V., and Seal, S., J. Electrochem. Soc. 151(4), G230–G235 (2004).Google Scholar
14 Lu, J., Garland, J. E., Pettit, C. M., Babu, S.V., and Roy, D., J. Electrochem. Soc. 151(10), G717–G722 (2004).Google Scholar
15 Walters, M. J., Garland, J.E., Pettit, C. M., Zimmerman, D.S., Marr, D. R., and Roy, D., J. Electroanal. Chem. 499, 48–60 (2001).Google Scholar
16 Bard, A. J. and Faulkner, L. R., Electrochemical Methods–Fundamentals and Applications, 2nd Edition, John Wiley & Sons, 2001.Google Scholar