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The Role of AlN Interlayer in AlxGa1-xN/GaN Heterostructures with high x from 0.35 to 0.50 Grown on Sapphire (0001)

Published online by Cambridge University Press:  01 February 2011

In-Seok Seo ,
Seung-Jae Lee ,
Seong-Hwan Jang ,
Jeong-Mo Yeon ,
Jae-Young Leem ,
Yong-Jo Park  and
Cheul-Ro Lee
In-Seok Seo
Affiliation:
School of Advanced Material Engineering, RCAMD, Engineering College, Chonbuk National University, Chonju 561-756, Chonbuk, Korea
Seung-Jae Lee
Affiliation:
School of Advanced Material Engineering, RCAMD, Engineering College, Chonbuk National University, Chonju 561-756, Chonbuk, Korea
Seong-Hwan Jang
Affiliation:
School of Advanced Material Engineering, RCAMD, Engineering College, Chonbuk National University, Chonju 561-756, Chonbuk, Korea
Jeong-Mo Yeon
Affiliation:
School of Advanced Material Engineering, RCAMD, Engineering College, Chonbuk National University, Chonju 561-756, Chonbuk, Korea
Jae-Young Leem
Affiliation:
Department of Optics, Engineering College, Inje University, Kimhae 621-749, KyungNam, Korea
Yong-Jo Park
Affiliation:
Samsung Advanced Institute of Technology(SAIT), P. O. Box 111, Suwon 440-600, Korea
Cheul-Ro Lee
Affiliation:
School of Advanced Material Engineering, RCAMD, Engineering College, Chonbuk National University, Chonju 561-756, Chonbuk, Korea
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Abstract

We report the role of thin AlN interlayer in the fabrication of AlxGa1-xN/GaN heterostructures with high x from 0.35 to 0.50 on sapphire (0001) by MOVPE. After growing the AlN interlayer of 20 nm thick on GaN/sapphire (0001) epitaxy, the AlxGa1-xN epitaxial layers of 1.0 um thick were grown on it with increasing the flow rate of TMA. The measured Al mole fractions of AlxGa1-xN/GaN heteroepitaxy grown using the thin AlN interlayer from each TCD rocking curve are 0.35, 0.37, 0.45 and 0.50, respectively. As incorporation rate of Al in the AlxGa1-xN increases, the crystallinity is getting well and the RMS values scanned by AFM of their surfaces become lower. And also, the optoelectronic characteristics of those heteroepitaxy evaluated by cathodeluminescence(CL) are improved with the increase of x. To the contrary these trends, it is usually known that crystallinity, surface morphology and optical property of the AlxGa1-xN/GaN heteroepitaxy grown without AlN interlayer between them become worse with the increase of x above 0.2. Meanwhile, electrical resisitivities of Al0.35Ga0.65N, Al0.37Ga0.63N, Al0.45Ga0.55N and Al0.50Ga0.50N epitaxy, which were grown with the thin AlN interlayer, measured by four point probing method are 13.5, 18.1, 31.7 and 36.2 Mohm-cm, respectively. These resisitivities increase by degrees in spite of the advance of characteristics with the raising of x.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 722: Symposia K/L – Materials and Devices for Optoelectronics and Photonics – Photonic Crystals-From Materials to Devices , 2002 , K7.4
Copyright
Copyright © Materials Research Society 2002

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References

1. Nakamura, S., J. Vac. Sci. Technol. A13 (1995)705 Google Scholar
2. Itaya, K., Onomura, M., Nishio, J., Sugiura, L., Saito, S., Suzuki, M., Rennie, J., Jpn. J. Appl. Phys., Part 2 35(1996)L1315 Google Scholar
3. Akasaki, I., Sota, S., Sakai, H., Tanaka, T., M.Koike, Amano, H., Electron lett., 32(1996)1105 Google Scholar
4. Yu, G., Ishikawa, H., Umeno, M., Egawa, T., Watanabe, J., Jimbo, T., Soga, T., Appl. Phys. Lett., 72(1998)2202 Google Scholar
5. Garrido, J. A., Sanchez-Rojas, J. L., Jimez, A., Munoz, E., Omnes, F., Gibart, P., Appl. Phys. Lett., 75(1999)2407 Google Scholar
6. Bergman, J. P., Lundstrom, T., Monemer, B., Appl. Phys. Lett., 74(1998)3456 Google Scholar
7. Huang, Tzu-fang, Harris, James S., Appl. Phys. Lett., 72(1998)1158 Google Scholar
8. Webb, J. B., Tang, H., Rolfe, S., Bardwell, J. A., Appl. Phys. Lett., 75(1999)953 Google Scholar
9. Lee, Cheul-Ro, J. Crys. Growth, 220(2000)62 Google Scholar
10. Khan, M. A., Skogman, R. A., Schulze, R. G., Gershenzon, M., Appl. Phys. Lett., 43(1983)492 Google Scholar
11. Lee, H. G., Gershenzon, M., Goldenberg, B. L., J. Electron. Mater. 20(1991)621 Google Scholar
12. Bremser, M. D., Perry, W. G., Zheleva, T., Edwards, N. V., Nam, O. H., Parihh, N., Aspnes, D. E., Davis, R. F., MRS Internet J. Nitride Semicon. Res, 1(1996)8 Google Scholar
13. Lee, C. R., Son, S. J., Lee, I. H., Lee, J. Y., Noh, S. K., J. Crystal Growth 182(1997)11 Google Scholar