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Role Of Active Oxygen Species On Growth Of ZnO Using RF-PAMBE

Published online by Cambridge University Press:  01 February 2011

Steven M. Durbin ,
William C. T. Lee ,
Martin Allen ,
Paul Miller  and
Roger J. Reeves
Steven M. Durbin
Affiliation:
[email protected], University of Canterbury, Electrical and Computer Engineering, Dept. of Electrical and Computer Engineering, University of Canterbury, Private Bag 4800, Christchurch, N/A, 8020, New Zealand, +64 3364 2867, +64 3364 2761
William C. T. Lee
Affiliation:
[email protected], New Zealand
Martin Allen
Affiliation:
[email protected], New Zealand
Paul Miller
Affiliation:
[email protected], University of Canterbury, Physics, New Zealand
Roger J. Reeves
Affiliation:
[email protected], University of Canterbury, Department of Physics, New Zealand
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Abstract

The effect of different oxygen species on the RF plasma-assisted molecular beam epitaxy growth of ZnO films has been investigated. By varying the geometry of the aperture plate and also the RF power, the relative atomic content in the discharge was altered, and this is found to be corre-lated to the film quality. Further, growth rate studies performed in tandem with in-situ laser interferometry suggest that stoichiometric conditions may not result in saturation of growth rates.

Keywords

molecular beam epitaxy (MBE)II-VIoxide
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 891: Symposium EE – Progress in Semiconductor Materials V – Novel Materials and Electronics and Optoelectronic Applications , 2005 , 0891-EE08-04
Copyright
Copyright © Materials Research Society 2006

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References

REFERENCES

1. Chen, Y., et al. , J. Appl. Phys 84, 3912 (1998).10.1063/1.368595Google Scholar
2. Jung, Y., No, Y., Kim, J., Choi, W., J. Cryst. Growth 267, 85 (2004).10.1016/j.jcrysgro.2004.03.010Google Scholar
3. Sakurai, K., et al. , J. Cryst. Growth 209, 522 (2000).10.1016/S0022-0248(99)00610-7Google Scholar
4. Miyamoto, K., Sano, M., Kato, H., Yao, T., J. Cryst. Growth 265, 34 (2004).10.1016/j.jcrysgro.2004.01.035Google Scholar
5. Murphy, T., Chen, D., Phillips, J., J. Electron. Mat. 34, 699 (2005).10.1007/s11664-005-0006-8Google Scholar
6. Ptak, A.J., et al. , MRS Internet J. Nitride Semicond. Res. 4S1, G3.10 (1999).Google Scholar
7. Anderson, P.A., Reeves, R.J. and Durbin, S.M., Phys. Stat. Sol. (c), (in press).Google Scholar
8. Lee, W.C.T., Miller, P., Swartz, C.H., Myers, T.H., Reeves, R.J., and Durbin, S.M., J. Electron. Mat. (in press).Google Scholar
9. Ko, H., Yao, T., Chen, Y., Hong, S., J. Appl. Phys. 92, 4354 (2002).10.1063/1.1509103Google Scholar