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RHEED Observation of Tin Atomic Chains Formation on Vicinal Gallium Arsenide Plane

Published online by Cambridge University Press:  17 March 2011

Aleksey Senichkin ,
Aleksandr Bugaev  and
Vladimir Mokerov
Aleksey Senichkin
Affiliation:
Institute of Radio Engineering and Electronics of RAS, 103907, 11 Mokchovaia str., Moscow, Russia
Aleksandr Bugaev
Affiliation:
Institute of Radio Engineering and Electronics of RAS, 103907, 11 Mokchovaia str., Moscow, Russia
Vladimir Mokerov
Affiliation:
Institute of Radio Engineering and Electronics of RAS, 103907, 11 Mokchovaia str., Moscow, Russia
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Abstract

In the present work by means of measurements of RHEED intensity the research of the arrangement of tin atoms on vicinal surfaces of GaAs crystals was carried out. The orientation of crystals was close to (001). The intensity of diffracted electrons was measured in different points of the diffraction picture to reveal the arrangement of tin atoms on terraces or on edges of terraces. It was shown that tin atoms may decorate edges of terraces and thus form chains. Concentrations of tin atoms located on terraces and their edges were established. It was revealed, that tin atoms decorate edges of terraces only at rather high temperatures of a substrate.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 648: Symposium P – Growth, Evolution & Properties of Surfaces, Thin Films, and Self Organized Structure , 2000 , P3.40
Copyright
Copyright © Materials Research Society 2001

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References

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