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Rheed Intensity Oscillation During the Epitaxial Growth of Silver and Gold Films

Published online by Cambridge University Press:  16 February 2011

Kazuki Mae
Affiliation:
Research Center for Advanced Science and Technology, University of Tokyo, Komaba 4-6-1, Meguro-ku, Tokyo 153, Japan
Kentaro Kyuno
Affiliation:
Research Center for Advanced Science and Technology, University of Tokyo, Komaba 4-6-1, Meguro-ku, Tokyo 153, Japan
Takeo Kaneko
Affiliation:
Research Center for Advanced Science and Technology, University of Tokyo, Komaba 4-6-1, Meguro-ku, Tokyo 153, Japan
Ryoichi Yamamoto
Affiliation:
Research Center for Advanced Science and Technology, University of Tokyo, Komaba 4-6-1, Meguro-ku, Tokyo 153, Japan
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Abstract

The intensity oscillation of reflection high-energy electron diffraction (RHEED) during the autoepitaxy of Au on Au(001) and Ag on Ag(001) and during the heteroepitaxy of Au on Ag(001) and Ag on Au(001) were measured at 310 and 330 K. The morphologies of the growing surfaces are discussed in terms of the surface energies and the surface reconstruction. RHEED intensity oscillation during Au deposition on Ag(001) at 330 K rapidly decayed at the 6th period when reconstruction of the Au(001) surface appeared. Such a rapid decay was not observed at 310 K. On the other hand, the reconstruction entirely disappeared at the first minimum of the RHEED intensity oscillation in the case of Ag deposition on Au.

Type
Research Article
Copyright
Copyright © Materials Research Society 1991

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References

REFERENCES

[1] Lilienkamp, G., Koziol, C., and Bauer, E.: ‘Reflection High-Energylectron Diffraction and Reflection Electron Imaging of Surfaces', ed. by Larsen, P.K. and Dobson, P.J. (Plenum Press, New York, 1988), pp 489499.Google Scholar
[2] Lang, C.A., Dovek, M.M., Nogami, J., and Quate, C.F.: Surface Sci. 224(1989)L947.Google Scholar
[3] Dovek, M.M., Lang, C.A., Nogami, J., and Quate, C.F.: Phys.Rev.B 40(1989)11973.Google Scholar
[4] Suzuki, Y., Kikuchi, H., and Koshizuka, N.: J.J.Appl.Phys. 27(1988)L1175.Google Scholar
[5] Kikuchi, H., Suzuki, Y., and Katayama, T.: J.Appl.Phys. 67(1990)5403.Google Scholar
[6] Takeuchi, N., Chan, C.T., and. Ho, K.M.: Phys.Rev.Lett.. 63(1989)1273.CrossRefGoogle Scholar
[7] Dobson, P.J., Joyce, B.A., Neave, J.H. and Zhang, J.: J.Crystal Growth 81(1987)1.CrossRefGoogle Scholar
[8] Doyle, P.A. and Turner, P.S.: Acta Cryst. A 24(1968)390.Google Scholar
[9] Flynn, C.P.: J.Phys. 18(1988)L195.Google Scholar
[10] Meyer-Ehmsen, G., Bolger, B., and Larsen, P.K.: surface sci. 224 (1989)591.Google Scholar