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RF Sputter Deposition of Indium Oxide / Indium Iron Oxide Thin Films for Photoelectrochemical Hydrogen Production
Published online by Cambridge University Press: 31 January 2011
Abstract
This project focuses on using indium oxide and indium iron oxide as an alloy to make a protective thin film (transparent, conductive, and corrosion resistant or TCCR) for amorphous silicon based solar cells, which are used in immersion-type photoelectrochemical cells for hydrogen production. From the work completed, the results indicate that samples made at 250 °C with 30 Watt of indium and 100 Watt of indium iron oxide, and a sputter deposition time of ninety minutes produced optimal results when deposited directly on single junction amorphous silicon solar cells. At 0.65 Volts, the best sample displays a maximum current density of 21.4 mA/cm2.
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- Copyright © Materials Research Society 2009