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RF Power Performance Evaluation of Surface Channel Diamond MESFET

Published online by Cambridge University Press:  31 January 2011

Maria Cristina Rossi ,
Paolo Calvani ,
Gennaro Conte ,
Vittorio Camarchia ,
Federica Cappelluti ,
Giovanni Ghione ,
Benedetto Pasciuto ,
Ernesto Limiti ,
Donatella Dominijanni  and
Ennio Giovine
Maria Cristina Rossi
Affiliation:
[email protected]
Paolo Calvani
Affiliation:
[email protected], University Roma Tre, Roma, Italy
Gennaro Conte
Affiliation:
[email protected], University Roma Tre, roma, Italy
Vittorio Camarchia
Affiliation:
[email protected], Politecnico di Torino, Torino, Italy
Federica Cappelluti
Affiliation:
[email protected], Politecnico di Torino, Torino, Italy
Giovanni Ghione
Affiliation:
[email protected], Politecnico di Torino, Torino, Italy
Benedetto Pasciuto
Affiliation:
[email protected], University Tor Vergata, Roma, Italy
Ernesto Limiti
Affiliation:
[email protected], University Tor Vergata, Roma, Italy
Donatella Dominijanni
Affiliation:
[email protected], IFN-CNR, Roma, Italy
Ennio Giovine
Affiliation:
[email protected], IFN-CNR, Roma, Italy
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Abstract

Large-signal radiofrequency performances of surface channel diamond MESFET fabricated on hydrogenated polycrystalline diamond are investigated. The adopted device structure is a typical coplanar two-finger gate layout, characterized in DC by an accumulation-like behavior with threshold voltage Vt ∼ 0-0.5 V and maximum DC drain current of 120 mA/mm. The best radiofrequency performances (in terms of fT and fmax) were obtained close to the threshold voltage. Realized devices are analyzed in standard class A operation, at an operating frequency of 2 GHz. The MESFET devices show a linear power gain of 8 dB and approximately 0.2 Wmm RF output power with 22% power added efficiency. An output power density of about 0.8 W/mm can be then extrapolated at 1 GHz, showing the potential of surface channel MESFET technology on polycrystalline diamond for microwave power devices.

Keywords

devicesdiamondhydrogenation
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1203: Symposium J – Diamond Electronics and Bioelectronics-Fundamentals to Applications III , 2009 , 1203-J15-04
Copyright
Copyright © Materials Research Society 2010

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