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RF Power Dependence of the Material Properties of PECVD Silicon Dioxide

Published online by Cambridge University Press:  21 February 2011

J. D. Chapple-Sokol ,
E. Tiemey  and
J. Batey
J. D. Chapple-Sokol
Affiliation:
IBM Corporation, General Technology Division, Hopewell Junction, NY 12533
E. Tiemey
Affiliation:
IBM Corporation, Research Division, Thomas J. Watson Research Center, Yorktown Heights, NY 10598
J. Batey
Affiliation:
IBM Corporation, Research Division, Thomas J. Watson Research Center, Yorktown Heights, NY 10598
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Abstract

Silicon dioxide films deposited from the PECVD reaction of silane and nitrous oxide in the presence of helium were studied to determine the effects of RF power on the deposition process. Increased RF power density yielded oxides which were structurally and chemically more homogeneous. The combination of elevated power density with increased silane concentration resulted in the deposition of films of high electrical and physical integrity at high deposition rates.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 165 , 1989 , 113
Copyright
Copyright © Materials Research Society 1990

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