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RF Magnetron Sputtering Process for (Ba,Sr)TiO3 Thin Films with Higher Dielectric Constant

Published online by Cambridge University Press:  01 February 2011

T. Jimbo ,
I. Kimura ,
Y. Nishioka  and
K. Suu
T. Jimbo
Affiliation:
Institute for Semiconductor Technologies, ULVAC, Inc., 1220–1 Suyama, Susono, Shizuoka 410–1231 Japan
I. Kimura
Affiliation:
Institute for Semiconductor Technologies, ULVAC, Inc., 1220–1 Suyama, Susono, Shizuoka 410–1231 Japan
Y. Nishioka
Affiliation:
Institute for Semiconductor Technologies, ULVAC, Inc., 1220–1 Suyama, Susono, Shizuoka 410–1231 Japan
K. Suu
Affiliation:
Institute for Semiconductor Technologies, ULVAC, Inc., 1220–1 Suyama, Susono, Shizuoka 410–1231 Japan
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Abstract

(Ba,Sr)TiO3 (BST) films were deposited by RF magnetron sputtering using BST sintered ceramic targets and an approach to deposit BST films with higher permittivity by sputtering deposition was explored aiming to the application of thin film capacitor, RF tunable components and so on.

Basic sputtering conditions such as RF power, deposition temperature and so on were varied in this study. BST films and Pt/BST/Pt capacitors were investigated by electrical properties, XRD analysis and SEM observation. It became clear that deposition temperature, deposition rate, and BST film thickness were important parameters for optimization of the dielectric constant. From the non-linearly relationship between dielectric constant and BST film thickness, we could also find that the interfacial layer between BST and Pt bottom electrode was important for controlling the BST film properties. Furthermore, an approach to enhance the crystalline quality has to be explored for further improvement of BST film properties. Dielectric constant could be raised up to 10% by just changing the gas flow sequence of BST sputtering process.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 784: Symposium C – Ferroelectric Thin Films XII , 2003 , C7.8
Copyright
Copyright © Materials Research Society 2004

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References

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