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Reversible Photo-Induced Currents in Epitaxial Pb(Zr0.52Ti0.48)O3 Thin Films

Published online by Cambridge University Press:  21 February 2011

J. Lee ,
S. Esayan ,
J. Prohaska  and
A. Safari
J. Lee
Affiliation:
Department of Ceramic Science and Engineering, Rutgers-The State University of New Jersey, Piscataway, NJ 08855-0909, USA
S. Esayan
Affiliation:
Department of Ceramic Science and Engineering, Rutgers-The State University of New Jersey, Piscataway, NJ 08855-0909, USA
J. Prohaska
Affiliation:
Department of Ceramic Science and Engineering, Rutgers-The State University of New Jersey, Piscataway, NJ 08855-0909, USA
A. Safari
Affiliation:
Department of Ceramic Science and Engineering, Rutgers-The State University of New Jersey, Piscataway, NJ 08855-0909, USA
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Abstract

The pyroelectric and photogalvanic effects have been studied extensively in epitaxial Pb(Zr0.52Ti0.48)O3 (PZT) thin films. For the first time, photo-induced currents, which were completely reversible by electrical voltage, were observed in ferroelectric thin films. The photo-induced currents exhibited transient and steady state components. The transient component, in turn, consisted of two components with fast (<1 µs) and slow (∼hours) relaxation times. The mechanisms of the photo-induced currents in PZT films and their possible application in non-destructive readout ferroelectric memory are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 310: Symposium N – Ferroelectric Thin Films III , 1993 , 107
Copyright
Copyright © Materials Research Society 1993

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