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Reversible and Switching Parts of Polarization in PZT Films

Published online by Cambridge University Press:  10 February 2011

Tatiana Petrovsky
Affiliation:
EMARC, University Missouri-Rolla, MO 65401
Alexander Grishin
Affiliation:
Dept of Condensed Mater Phys, Royal Institute of Technology, Stockholm, Sweden
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Abstract

A pulsing technique was used for more detailed investigation of the switching process in ferroelectric PZT films. This technique allows for the separation of the switching and reversible parts of the polarization and an estimation of the impact of the different effects in the hysteresis loop such as domain structure, depolarizing field and space charge distribution. It is shown that it is possible to provide nondestructive readout of the information stored as the polarization state by measuring the nonlinearity of the reversible polarization. Theoretical limit for the nondestructive readout signal is 20% of the remanent polarization in the differential regime and 12% in the direct regime. The experimental value of the signal is 10% in the both regimes and does not depend on time or the number of readings.

Type
Research Article
Copyright
Copyright © Materials Research Society 2000

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References

REFERENCES

1. Petrovsky, V. I., Pevtsov, E. F., and Sigov, A. S., Microelectr. Eng., 29, pp. 149152 (1995).Google Scholar
2. Tagantsev, A. K., Pawlaczk, Cz., Brooks, K., and Setter, N., Integr. Ferroel., 4, p. 1 (1994).Google Scholar
3. Scott, J. F., Ross, F. M., Arujo, C. A. Paz de, Scott, M. C., and Huffman, M., Mat.Res.Soc.Bull., 21 (7), pp. 3339 (1996).Google Scholar
4. Sigov, A. S., Petrovsky, V. I., Pevtsov, E. F., Vorotilov, K. A., and Valeev, A. S., in NATO ASI Series (E), 284, p. 427 (1995).Google Scholar
5. Warren, W. L., Dimos, D., and Waser, R. M., Mat.Res.Soc.Bull., 21 (7), pp.4045 (1996).Google Scholar
6. Petrovsky, V. I., Pevtsov, E. F., and Sigov, A. S., Mat.Res.Soc.Proc., 361, p.135 (1995).Google Scholar
7. Petrovsky, V., Anderson, H. U., and Shumsky, M., Mat.Res.Soc.Proc., 472, pp. 251256 (1997).Google Scholar
8. Vorotilov, K. A., Yanovskaya, M. I., Solovjeva, L. I., Valeev, A. S., Petrovsky, V. I., Vasiljev, V. A., and Obvinzeva, I. E., Microelectr. Eng, 29, pp. 4144 (1995).Google Scholar
9. Yanovskaya, M. I. et al. , Integrated Ferroelectrics, 4, p.275 (1994).Google Scholar