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Reverse Leakage Current in GaAs/AlGaAs Self Electro-Optic Effect Devices

Published online by Cambridge University Press:  26 February 2011

J. M. Freund ,
V. Swaminathan ,
M. W. Focht ,
G. D. Guth ,
G. J. Przybylek ,
L. E. Smith ,
R. E. Leibenguth ,
L. M. F. Chirovsky  and
L. A. D'Asaro
J. M. Freund
Affiliation:
AT&T Bell Laboratories, 9999 Hamilton Boulevard, Breinigsville, PA 18031
V. Swaminathan
Affiliation:
AT&T Bell Laboratories, 9999 Hamilton Boulevard, Breinigsville, PA 18031
M. W. Focht
Affiliation:
AT&T Bell Laboratories, 9999 Hamilton Boulevard, Breinigsville, PA 18031
G. D. Guth
Affiliation:
AT&T Bell Laboratories, 9999 Hamilton Boulevard, Breinigsville, PA 18031
G. J. Przybylek
Affiliation:
AT&T Bell Laboratories, 9999 Hamilton Boulevard, Breinigsville, PA 18031
L. E. Smith
Affiliation:
AT&T Bell Laboratories, 9999 Hamilton Boulevard, Breinigsville, PA 18031
R. E. Leibenguth
Affiliation:
AT&T Bell Laboratories, 9999 Hamilton Boulevard, Breinigsville, PA 18031
L. M. F. Chirovsky
Affiliation:
AT&T Bell Laboratories, 9999 Hamilton Boulevard, Breinigsville, PA 18031
L. A. D'Asaro
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974
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The self-electro-optic effect device (SEED) and the symmetric SEED (S-SEED) have demonstrated considerable applications for photonic switching and logic functionality. A SEED consists of a p-i-n, mesa diode, with a multiple-quantum-well structure for the i region. The symmetric SEED consists of two p-i-n mesa diodes connected in series. The S-SEED has been fabricated in functional arrays containing as many as 32×64 elements. The SEED and S-SEED are operated under a reverse bias, thus low reverse leakage is desired. As the magnitude of the reverse leakage current increases, more incident laser power is required to switch device states and then hold that state. Therefore, understanding the origins of the reverse leakage current and its dependence on mesa and array size is imperative for optimizing device performance.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 240: Symposium E – Advanced III-V Compound Semiconductor Growth, Processing and Devices , 1991 , 531
Copyright
Copyright © Materials Research Society 1992

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References

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