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Resonant Raman Scattering in CdSxSe1−x Nanocrystals: Electron-Phonon Coupling

Published online by Cambridge University Press:  28 February 2011

M. Silvestri ,
L.W. Hwang ,
P. Persans  and
J. Schroeder
M. Silvestri
Affiliation:
Department of Physics and Center for Glass Science and Technology Rensselaer Polytechnic Institute, Troy, New York 12180-3590, USA
L.W. Hwang
Affiliation:
Department of Physics and Center for Glass Science and Technology Rensselaer Polytechnic Institute, Troy, New York 12180-3590, USA
P. Persans
Affiliation:
Department of Physics and Center for Glass Science and Technology Rensselaer Polytechnic Institute, Troy, New York 12180-3590, USA
J. Schroeder
Affiliation:
Department of Physics and Center for Glass Science and Technology Rensselaer Polytechnic Institute, Troy, New York 12180-3590, USA
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Abstract

We report pressure and laser tuned Raman scattering studies on CdSxSei1-x nanocrystals. The electron-phonon coupling strength was determined as a function of pressure beyond the bulk phase transition pressure point. The coupling strength at atmospheric pressure determined from the Stokes shifted photoluminescence and resonant Raman scattering is not drastically smaller than the bulk value as might be expected theoretically. As a function of pressure it also shows no abrupt changes at the bulk phase transition pressure point. These results indicate that deep traps play a critical part in the mechanism of the electron-phonon coupling.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 358: Symposium F – Microcrystalline and Nanocrystalline Semiconductors , 1994 , 235
Copyright
Copyright © Materials Research Society 1995

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References

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