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Resonant Excitation Spectroscopy of Light-Emitting Silicon Nanostructures

Published online by Cambridge University Press:  10 February 2011

Yoshihiko Kanemitsu  and
Shinji Okamoto
Yoshihiko Kanemitsu
Affiliation:
Graduate School of Materials Science, Nara Institute of Science and Technology, Ikoma, Nara 630-01, Japan, [email protected]
Shinji Okamoto
Affiliation:
Graduate School of Materials Science, Nara Institute of Science and Technology, Ikoma, Nara 630-01, Japan, [email protected]
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Abstract

We have studied optical properties and electronic structures of zero-dimensional (OD) Si nanocrystals and two-dimensional (2D) Si quantum wells by means of resonant excitation spectroscopy. Resonantly excited luminescence spectra of 0D Si nanocrystals are sensitive to the surface structure. The size dependence of the photoluminescence (PL) properties and resonantly excited PL spectra of SiO2-capped Si nanocrystals indicate that excitons are localized at the interface between the c-Si and SiO2 surface layer. The TO-phonon related structure in resonantly excited luminescence is clearly observed in H-passivated Si nanocrystals. Hpassivated Si nanocrystals show their crystalline nature, while the oxidized Si nanocrystals show their disordered nature. Luminescence properties of Si/SiO2 nanocrystals are similar to those of Si/SiO2 quantum wells. The electronic structures and luminescence properties of Si nanostructures are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 486: Symposium H – Materials & Devices for Silicon Based Optoelectronics , 1997 , 201
Copyright
Copyright © Materials Research Society 1998

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References

1. Kanemitsu, Y., Phys. Rep. 263, 1 (1995).Google Scholar
2. Light Emission in Silicon, Semiconductors and Semimetals vol.49, edited by Lockwood, D. J. (Academic, New York, 1997).Google Scholar
3. Kanemitsu, Y., Ogawa, T., Shiraishi, K., and Takeda, K., Phys. Rev. B 48, 4883 (1993).Google Scholar
4. Tsu, R., Nature 364, 19 (1993); R. Tsu, J. Morals, and A. Bowhill, Mat. Res. Soc. Symp. Proc. 358, 825 (1995).Google Scholar
5. Takahashi, Y., Furuta, T., Ono, Y., Ishiyama, T. and Tabe, M., Jpn. J. Appl. Phys. 34, 950 (1995).Google Scholar
6. Lockwood, D. J., Lu, Z. H. and Baribeau, J.-M., Phys. Rev. Lett. 76, 539 (1996); Nature 378, 258 (1995).Google Scholar
7. Okamoto, S. and Kanemitsu, Y., Solid State Commun. 103, 573 (1997).Google Scholar
8. Kanemitsu, Y., Okamoto, S., Otobe, M., and Oda, S., Phys. Rev. B 55, R7375 (1997).Google Scholar
9. Kanemitsu, Y., and Okamoto, S., Phys. Rev. B 56, R15561 (1997).Google Scholar
10. Itoh, T. and Furumiya, M., J. Lumin. 48/49, 704 (1991).Google Scholar
11. Calcott, P. D. J., Nash, K. J., Canham, L. T., Kane, M. J., and Brumhead, D., J. Phys. Condens. Matter. 5, L91 (1993); J. Lumin. 57, 271 (1994).Google Scholar
12. Al. Efros, L., Rosen, M., Kuno, M., Nirmal, M., Norris, D. J., and Bawendi, M., Phys. Rev. B 54, 4843 (1996).Google Scholar
13. Kanemitsu, Y., Shimizu, N., Komoda, T., Hemment, P. L. F., and Sealy, B. J., Phys. Rev. B 54, R14329 (1996).Google Scholar
14. Kanemitsu, Y. and Okamoto, S., Phys. Rev. B 56, R1696 (1997).Google Scholar
15. Takagi, H., Ogawa, H., Yamazaki, Y., Ishizaki, A., and Nakagiri, T., Appl. Phys. Lett 56, 2349 (1990).Google Scholar
16. Schuppler, S. Friedman, S. L., Marcus, M. A., Adler, D. L., Xie, Y. H., Ross, R. M., Chabal, Y. J., Harris, T. D., Brus, L. E., Brown, W. L., Chaban, E. E., Szajowski, P. F., Chirstman, S. B., and Citrin, P. H., Phys. Rev. B 52, 4910 (1995).Google Scholar
17. Kanemitsu, Y., Mimura, H., Matsumoto, T., and Nakamura, T., J. Lumin. 72–74, 344 (1997).Google Scholar
18. Ito, K., Ohyama, S., Uehara, Y., and Ushioda, S., Appl. Phys. Lett. 67, 2536 (1995).Google Scholar
19. Matsumoto, T., unpublished data.Google Scholar
20. Takagahara, T. and Takeda, K., Phys. Rev. B 46, 15578 (1992).Google Scholar
21. Proot, P., Delerue, C., and Allan, G., Appl. Phys. Lett. 61, 1948 (1992).Google Scholar
22. Wang, L. W. and Zunger, A., J. Chem. Phys. 100, 2394 (1994).Google Scholar
23. Shaklee, K. L. and Nathory, R. E., Phys. Rev. Lett. 24, 942 (1970); T. Nishino, M. Takeda, and Y. Hamakawa, Solid State Commun. 14, 627 (1974).Google Scholar
24. Suemoto, T. and Saito, A., Phys. Rev. B 55, 10115 (1997).Google Scholar
25. Kageshima, H. and Shiraishi, K., this volume.Google Scholar
26. Kovalev, D., Ben-Chorin, M., Diener, J., Averboukh, B., Polisski, G., and Koch, F., Phys. Rev. Lett. 79, 119 (1997).Google Scholar
27. Kanemitsu, Y. and Okamoto, S., unpublished.Google Scholar
28. Okamoto, S. and Kanemitsu, Y., Phys. Rev. B 54, 16421 (1996).Google Scholar
29. Zhang, S. B. and Zunger, A., Appl. Phys. Lett. 63, 1399 (1993).Google Scholar
30. Kageshima, H., Surf. Sci. 357/358, 312 (1996).Google Scholar