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Resistive Switching Memory Based on Ferroelectric Polarization Reversal at Schottky-like BiFeO3 Interfaces

Published online by Cambridge University Press:  21 May 2012

Atsushi Tsurumaki-Fukuchi ,
Hiroyuki Yamada  and
Akihito Sawa
Atsushi Tsurumaki-Fukuchi
Affiliation:
National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8562, Japan
Hiroyuki Yamada
Affiliation:
National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8562, Japan
Akihito Sawa
Affiliation:
National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8562, Japan
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Abstract

We have fabricated a ferroelectric resistive switching device of Pt/Bi1-δFeO3 (BFO)/SrRuO3 (SRO) in which the conductivity of BFO layer was controlled by changing the Bi-deficiency concentration. The devices showed a bipolar-type resistive switching effect, i.e., zero-crossing hysteretic current–voltage (I–V) characteristics. In addition, the I–V characteristics in both high and low resistance states are nonlinear, which can avoid a read-error problem in a passive crossbar memory array. Resistive switching characteristics measured in pulse-voltage mode revealed that the resistance values in low resistance states vary with the amplitude and duration time of the pulsed-voltage stresses, indicating possibility of multilevel switching. On the basis of the experimental results, we discuss the potential of the Pt/BFO/SRO device for application in a large-capacity nonvolatile memory.

Keywords

memoryoxideferroelectric
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1430: Symposium E – Materials and Physics of Emerging Nonvolatile Memories , 2012 , mrss12-1430-e04-04
Copyright
Copyright © Materials Research Society 2012

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References

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