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Residual Stresses in Sputtered ZnO Films on (100) Si Substrates by XRD

Published online by Cambridge University Press:  31 January 2011

Florine Conchon ,
Pierre-Olivier Renault ,
Philippe Goudeau ,
Eric Le Bourhis ,
Elin Sondergard ,
Etienne Barthel ,
Sergey Grachev ,
Eric Gouardes ,
Veronique Rondeau  and
René Gy
...Show all authors
Florine Conchon
Affiliation:
[email protected], U. Poitiers, LPM-CNRS UMR 6630, Futuroscope-chasseneuil, France
Pierre-Olivier Renault
Affiliation:
[email protected], U. Poitiers, LPM-CNRS UMR 6630, Futuroscope-chasseneuil, France
Philippe Goudeau
Affiliation:
[email protected], U. Poitiers, LPM-CNRS UMR 6630, Futuroscope-chasseneuil, France
Eric Le Bourhis
Affiliation:
[email protected], U. Poitiers, LPM-CNRS UMR 6630, Futuroscope-chasseneuil, France
Elin Sondergard
Affiliation:
[email protected], Saint Gobain/CNRS, SVI-UMR 125, Aubervilliers, France
Etienne Barthel
Affiliation:
[email protected], Saint Gobain/CNRS, SVI-UMR 125, Aubervilliers, France
Sergey Grachev
Affiliation:
[email protected], Saint Gobain/CNRS, SVI-UMR 125, Aubervilliers, France
Eric Gouardes
Affiliation:
[email protected], Saint Gobain, SGR, Aubervilliers, France
Veronique Rondeau
Affiliation:
[email protected], Saint Gobain, SGR, Aubervilliers, France
René Gy
Affiliation:
[email protected], Saint Gobain, SGR, Aubervilliers, France
Remi Lazzari
Affiliation:
[email protected], Institut des Nanosciences de Paris, UMR 7588, Paris, France
Jacques Jupille
Affiliation:
[email protected], Institut des Nanosciences de Paris, UMR 7588, Paris, France
Nathalie Brun
Affiliation:
[email protected], U. Orsay, LPS UMR 8502, Orsay, France
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Abstract

Residual stresses in sputtered ZnO films on Si are investigated and discussed. By means of X-ray diffraction, we show that as-deposited ZnO films encapsulated or not by Si3N4 protective coatings are highly compressively stressed. Moreover, a transition of stress is observed as a function of the post-deposition annealing temperature. After a heat treatment at 800°C, ZnO films are tensily stressed while ZnO films encapsulated by Si3N4 are stress-free. With the aid of in-situ X-ray diffraction, we argue that this thermally-activated stress relaxation can be attributed to a variation of the chemical composition of the ZnO films.

Keywords

x-ray diffraction (XRD)thin filmstrength
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1201: Symposium H – Zinc Oxide and Related Materials-2009 , 2009 , 1201-H05-03
Copyright
Copyright © Materials Research Society 2010

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