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The Residual Stress Effect on Microstructure and Optical Property of ZnO Films produced by RF Sputtering

Published online by Cambridge University Press:  01 February 2011

Sang Ryu  and
Youngman Kim
Sang Ryu
Affiliation:
Department of Materials Science and Engineering, Chonnam National University, Gwangju, 500–757, KOREA.
Youngman Kim
Affiliation:
Department of Materials Science and Engineering, Chonnam National University, Gwangju, 500–757, KOREA.
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Abstract

ZnO films were produced on the Si(100) and sapphire(0001) wafers by RF magnetron sputtering in terms of processing variables such as substrate temperature and RF power. The stress in films was obtained from the Stoney's formula using a laser scanning device. The stress levels in the films showed the range from ∼40MPa to ∼-1100MPa depending on processing variables.

SEM was employed to characterize the microstructure of the films. As the substrate temperature increased, the film surface became rougher and the films showed coarser grains. The optical property of the films was studied by PL measurements. At the highest substrate temperature 800°C the film exhibited sharper UV peaks unlike other conditions.

Keywords

StressZnO thin filmsR.F. magnetron sputtering
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 854: Symposium U – Stability of Thin Films and Nanostructures , 2004 , U8.18
Copyright
Copyright © Materials Research Society 2005

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References

REFERENCES

1. Reynolds, D. C., et. al., Solid State Communications, Vol. 10–6 [10] (1998) 701–704.Google Scholar
2. Reynolds, D. C, et. al, Journal of Luminescence, 82 (1999) 173–176.Google Scholar
3. Kim, Y., J. Electr. Mater., 26(9) (1997) 1002.Google Scholar
4. Cho, K.-H., Kim, Y., J. Mater. Res., 14(5) (1999) 1996.Google Scholar
5. Kim, Y., Choo, S.-H., Thin Solid Film, 394 (2001) 284–291.Google Scholar
6. Narayan, J., et. al., J. Appl. Phys., 84 (5) (1998).Google Scholar
7. Fons, P., et. al., J. Cryst. Growth, 227–228 (2001) 911–916.Google Scholar
8. Jeong, S.-H., Kim, I.-S., Kim, J.-K., Lee, B.-T., J. Cryst. Growth 264, (2004) 327–333.Google Scholar
9. Lee, H. W., et. al., Thin Solid Films, 458 (2004) 15–19.Google Scholar