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Reproducible Electro-resistance Memory Effect in Ag/La0.67Sr0.33MnO3 Thin Films

Published online by Cambridge University Press:  01 February 2011

Lina Huang ,
Bingjun Qu  and
Litian Liu
Lina Huang
Affiliation:
[email protected], Institute of Microelectronics, Tsinghua University, Institute of Microelectronics, Tsinghua University, Institute of Microelectronics,, Tsinghua University,, District Haidian, Beijing, 100084, China, People's Republic of
Bingjun Qu
Affiliation:
[email protected], Institute of Microelectronics, Tsinghua University, Beijing, 100084, China, People's Republic of
Litian Liu
Affiliation:
[email protected], Institute of Microelectronics, Tsinghua University, Beijing, 100084, China, People's Republic of
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Abstract

The hysteretic and reproducible electro-resistance memory effect has been investigated in epitaxial La0.67Sr0.33MnO3 (LSMO) films under DC-bias stress and voltage pulses. The bias-sensitive current-voltage characteristic of the Ag/LSMO system is distinctly nonlinear, asymmetric and hysteretic, which indicates the appearance of the resistive switching. The diffusive resistance transition, which occurred during the field increase/decrease processes, is likely ascribed to a large intrasystem charge transfer for the electronic inhomogeneous heterostructure. The pulsed voltage amplitude and duration dependence of the nonvolatile resistive switch were also provided. Clear resistance switching cycles were observed at room temperature under voltage pulses of ±5V and ∼150ns. Reproducible switching properties, involving voltage-induced stepwise resistance change, resistance state saturation, and pulse duration dependent multilevel switchable capability, demonstrate well controllability with respect to future nonvolatile random access memory applications.

Keywords

thin filmelectrical propertiesmemory
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1071: Symposium F – Materials Science and Technology for Nonvolatile Memories , 2008 , 1071-F09-12
Copyright
Copyright © Materials Research Society 2008

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