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Renaissance and Progress in Nitride Semiconductors - My Personal History of Nitride Research -

Published online by Cambridge University Press:  17 March 2011

Isamu Akasaki
Isamu Akasaki*
Affiliation:
Dept. Materials Science and Engineering, and High-Tech Research Center, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, JAPAN
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Abstract

Wide bandgap group-III nitride semiconductors are currently experiencing the most exciting development. High brightness blue and green light emitting diodes (LEDs) are commercialized, and UV and blue laser diodes (LDs), high-speed transistors (TRs) and UV photodetectors (PDs) with low dark current, which will be able to operate in harsh environments, have been demonstrated. In this paper, renaissance and progress in crystal growth and conductivity control of nitride semiconductors in the last quarter century are reviewed as the groundwork for all of those high-performance devices. My personal history of nitride research will be also introduced.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 639: Symposium G – GaN and Related Alloys-2000 , 2000 , G8.1
Copyright
Copyright © Materials Research Society 2001

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References

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