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Removal of End-of-Range Ion Implantation Defects in Silicon by Near Noble and Refractory Silicide Formation
Published online by Cambridge University Press: 21 February 2011
Abstract
Complete removal of end-of-range (EOR) defects in ion implanted silicon has been achieved by the formation and growth of near noble silicides (CoSi 2 and NiSi 2 ) and refractory silicides (MoSi 2 and WSi2). Continued generation of vacancies during the silicide growth was found to be essential to reduce EOR defects. The results are consistent with the suggestion of the presence of a vacancy diffusion barrier near the EOR defects
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- Copyright © Materials Research Society 1989
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