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Remote Silane Plasma Chemistry Effects and their Correlation with a-Si:H Film Properties

Published online by Cambridge University Press:  15 February 2011

W.M.M. Kessels ,
A.H.M. Smets ,
B.A. Korevaar ,
G.J. Adriaenssens ,
M.C.M. Van de Sanden  and
D.C. Schram
W.M.M. Kessels
Affiliation:
Dept. of Appl. Physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven, The Netherlands, [email protected]
A.H.M. Smets
Affiliation:
Dept. of Appl. Physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven, The Netherlands
B.A. Korevaar
Affiliation:
Dept. of Appl. Physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven, The Netherlands
G.J. Adriaenssens
Affiliation:
Semiconductor Physics Laboratory, Katholieke Universiteit Leuven, Celestijnenlaan 200 D, B3001 Heverlee-Leuven, Belgium
M.C.M. Van de Sanden
Affiliation:
Dept. of Appl. Physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven, The Netherlands
D.C. Schram
Affiliation:
Dept. of Appl. Physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven, The Netherlands
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Abstract

A remote silane plasma, capable of depositing solar grade a-Si:H at a rate of 10 nm/s and with an up to ten times higher hole drift mobility than standard a-Si:H, has been investigated by means of several plasma diagnostics. The creation of the different reactive species in the plasma and their contribution to film growth has been analyzed and is correlated with the film properties obtained under various conditions. Furthermore, the first results on a n-i-p solar cell with the intrinsic a-Si:H film deposited by this remote plasma are presented.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 557: Symposium A – Amorphous and Heterogeneous Silicon Thin Films—Fundamentals to Devices—1999 , 1999 , 25
Copyright
Copyright © Materials Research Society 1999

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References

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