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Reliable Local Strain Characterization on Si/SiGe Structures in Biaxial Tension

Published online by Cambridge University Press:  01 February 2011

Wenjun Zhao ,
Gerd Duscher ,
Mohammed A. Zikry  and
George Rozgonyi
Wenjun Zhao
Affiliation:
[email protected], North Carolina State University, Materials Science and Engineering, 911 Parnters Way, RM 3074 EB1, RALEIGH, NC, 27606, United States
Gerd Duscher
Affiliation:
[email protected], North Carolina State University, MSE, 911 Parnters Way, RM 3074 EB1, RALEIGH, NC, 27606, United States
Mohammed A. Zikry
Affiliation:
[email protected], North Carolina State University, Mechanical and Aerospace Department, RALEIGH, NC, 27606, United States
George Rozgonyi
Affiliation:
[email protected], North Carolina State University, Materials Science and Engineering, RALEIGH, NC, 27606, United States
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Abstract

The strain in the strained Si layer on a blanket strained Si/SiGe structure could not be determined with only convergent beam electron diffraction to high order Laue zone (HOLZ) line splitting. Combined with CBED and finite element calculations, we quantified the deformation field from HOLZ line splitting and demonstrated a procedure to determine the initial strain in the strained Si layer. Our results also gave us insights in strain relaxation in a TEM sample. The CBED technique combined with FE modeling has the potential for initial strain measurements on new generation short channel CMOS technology nodes.

Keywords

stress/strain relationshiptransmission electron microscopy (TEM)Si
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 958: Symposium L – Group IV Semiconductor Nanostructures—2006 , 2006 , 0958-L04-08
Copyright
Copyright © Materials Research Society 2007

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References

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