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Reliability Study of Plasma Etching Damage in ULSI Process

Published online by Cambridge University Press:  22 February 2011

Xiao-Yu Li ,
Jen-Tai Hsu ,
Paul Aum ,
Vivek Bissessur ,
David Chan  and
C.R. Viswanathan
Xiao-Yu Li
Affiliation:
Department of Electrical Engineering, University of California, Los Angeles, CA 90024
Jen-Tai Hsu
Affiliation:
Department of Electrical Engineering, University of California, Los Angeles, CA 90024
Paul Aum
Affiliation:
SEMATECH, Austin, TX 78741-6499
Vivek Bissessur
Affiliation:
SEMATECH, Austin, TX 78741-6499
David Chan
Affiliation:
SEMATECH, Austin, TX 78741-6499
C.R. Viswanathan
Affiliation:
Department of Electrical Engineering, University of California, Los Angeles, CA 90024
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Abstract

Plasma etching can cause damage in gate oxide during ULSI processing. The damage in the oxide is believed to arise through a high field induced stress current. However, there is another type of damage which is due to ion and photon bombardment on the edge of poly-Si gate during the plasma etching. These two damage mechanisms impose different reliability problems. One is hot-carrier(HC) stress and the other is Fowler-Nordheim(F-N) stress. MOS devices with special test structures to assess plasma process damage were fabricated using 0.35 μm CMOS technology. The devices with different poly gate antennas and etching through different poly-Si gate etching conditions were studied using SEM and various electrical techniques. It was found that oxide charging damaged device is more susceptible to F-N type of stress while ion and photon bombardment damaged device is more susceptible to HC type of stress.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 338: Symposium – Materials Reliability in Microelectronics IV , 1994 , 51
Copyright
Copyright © Materials Research Society 1994

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References

REFERENCES

[1] Oehrlein, G.S., Rembetski, J.F., IBM J. Res. Develop, vol. 36 No. 2. p. 141, (1992).Google Scholar
[2] Shone, F., K, Wu, Shaw, J., Hokelek, E., Mittal, S., and Haranalialli, A., VLSI Symposium Tech. Dig., p. 73, (1989). of tile 19th Conference on Solid State Devices and Material, p. 195, (1987).Google Scholar
[3] Rydén, K.H., Norstrim, H., Nender, C. and Berg, S., J. Electro. Chem. Society, vol. 134, p.3113, (1987).Google Scholar
[4] Namura, T., Uchida, H., Okada, H., Kosshio, A., Nakagawa, S., Todokoro, Y. and Inoue, M., Proc. SPIE. Dry Etch Technology, p. 11, (1991).Google Scholar
[5] Shiin, H., Jha, N., Qian, X.Y., Hills, G.W., and Hu, C., Solid State Technology, p. 29, August, (1993).Google Scholar
[6] Li, X.Y., Hsu, J.T., Auri, P., Bissessur, V., Chan, D. and Viswanathan, C.R., IEE Electronics Letters, vol.30, No.4, (1994)Google Scholar
[7] Li, Xiaoyu, Divakaruni, R., Hsu, Jen-Tai, Prabhiakar, V., Aum, Paul, Chan, David, and Viswanathan, C.R., IEEE Electron Device Letters, vol.15, No.4, (1994).Google Scholar
[8] Heremans, P., Witters, J., Groeseneken, G., and Maes, H., IEEE Trans. Electron Devices, vol.36, p.1318, (1989).Google Scholar
[9] Chang, J., PhD dissertation, UCLA, 1994 Google Scholar
[10] Gu, T., Okandani, M., Awaadelkarim, O.O., Fonash, S.J., Rembetski, J.F., Aum, P. and Chan, D., IEEE Electron Device Letters, vol.15, No.2, (1994).Google Scholar
[11] Li, Xiaoyu, Hsu, Jen-Tai, Aura, Paul, Chan, David, Rembetski, J. and Viswanathan, C.R., IEEE Electron Device Letters, vol. 14, No.2, (1993).Google Scholar