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Reliability of Thermal Conductivity Measured by Harman Method

Published online by Cambridge University Press:  10 February 2011

Y. Shinohara
Affiliation:
The 4th Research Group, National Research Institute for Metals, 1–2–1, Sengen, Tsukuba-shi 305–0047, Japan
Y. Imai
Affiliation:
The 4th Research Group, National Research Institute for Metals, 1–2–1, Sengen, Tsukuba-shi 305–0047, Japan
Y. Isoda
Affiliation:
The 4th Research Group, National Research Institute for Metals, 1–2–1, Sengen, Tsukuba-shi 305–0047, Japan
I. A. Nishida
Affiliation:
The 4th Research Group, National Research Institute for Metals, 1–2–1, Sengen, Tsukuba-shi 305–0047, Japan
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Abstract

The Harman method was applied to measure thermal conductivity κ of thermoelectric materials, and the reliability of the measured κ was investigated. The quantitative κ requires a highly sensitive technique to measure minute Peltier heat. Temperature difference by Peltier heat pumping was successfully measured by developing the DC method of resistance measurement. κ of n-type Bi2Te3 sintered compact and n-type PbTe boules was measured at 295K by the Harman method. Static comparative method was also applied to obtain the standard value of κ. In the case of Bi2Te3, the κ by the Harman method agreed well with the standard value. In the case of PbTe in the electron concentration ne range <5 × 1024/m3, the κ almost agreed with the standard value. However, PbTe in the ne range ≥1 × 1025/m3 showed a larger κ than the standard value. The Harman method has an error to give the larger κ for the material with a large carrier component κ, of κ This error is due to the fast conduction of Peltier heat by the carrier. The reliable κ can be measured for the material with a small κ,.

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Articles
Copyright
Copyright © Materials Research Society 1999

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References

1. Harman, T.C., Semiconductor Products, Sep., p. 13(1963).Google Scholar
2. Buistin, R.J. CRC Handbook of THERMOELECTRICS, edited by Rowe, D.M., CRC Press Inc., New York, 1994, pp. 189–209.Google Scholar
3. Uemura, K. and Nishida, I.A., TERMOELECTRIC MATERIALS and APPLICATIONS (in Japanese), Nikkan Kogyo Shinbunsha, Tokyo,1988, pp. 195.Google Scholar
4. Nishida, I.A. in CRC Handbook of THERMOELECTRICS, edited by Rowe, D.M., CRC Press Inc., New York, 1994, pp. 157–164.Google Scholar
5. Kaibe, H., Tanaka, Y., Sakata, M. and Nishida, I.A., J.Phys.Chem.Solid, 50, p.945(1989).CrossRefGoogle Scholar
6. MilIs, K.C., Thermodynamic DATA for Inorganic Sulphides, Selenides and Tellurides, Butterworth, London, 1974.Google Scholar