Hostname: page-component-78c5997874-g7gxr Total loading time: 0 Render date: 2024-11-19T06:44:18.899Z Has data issue: false hasContentIssue false
  • English
  • Français

Reliability of Submicron Mosfet's with Deposited Gate Oxides under F-N Injection and Hot-Carrier Stress

Published online by Cambridge University Press:  15 February 2011

Ming-Yin Hao ,
Jack C. Lee ,
Ih-Chin Chen  and
Clarence W. Teng
Ming-Yin Hao
Affiliation:
Dept. of Electrical and Computer Engineering, University of Texas at Austin, Austin, Tx 78712
Jack C. Lee
Affiliation:
Dept. of Electrical and Computer Engineering, University of Texas at Austin, Austin, Tx 78712
Ih-Chin Chen
Affiliation:
Semiconductor Process and Design Center, Texas Instruments Incorporated, Dallas, Tx 75265
Clarence W. Teng
Affiliation:
Semiconductor Process and Design Center, Texas Instruments Incorporated, Dallas, Tx 75265
Get access

Abstract

In this paper, submicron nMOSFET's with thin LPCVD gate oxides deposited using chemical reaction of dichlorosilane and nitrous oxide at 800 °C were evaluated. Fowler-Nordheim injection was performed to compare the resistance to electron trapping and interface-state generation of these LPCVD oxides to that of the thermally grown oxides at 850 °C. It was found that with an 850 °C 20-minute post-deposition nitrogen anneal, the LPCVD oxides exhibit comparable immunity to electron trapping as the thermal oxides. Transistor characteristics such as Δgm/gm, ΔID/ID revealed to be similar for both oxides, but there was an order of magnitude higher ΔVt detected for the LPCVD oxide films (with/without anneal) than the thermal oxides. The mechanism responsible for the hot-carrier induced device degradation was also characterized in this study. It was found that the major source of hot-carrier damage was electron trapping for the thermal oxides and the N2 - annealed LPCVD oxides; while for the as-deposited LPCVD oxides, both electron trapping and interface-state generation contributed to device degradation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 265: Symposium H – Materials Reliability in Microelectronics II , 1992 , 237
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[REFERENCES]

1. Sze, S. M., VLSI Technology, 2nd ed. (McGRAW -Hill publishers, New York, 1988), p. 253.Google Scholar
2. Lee, J., Chen, I-C, and Hu, C., IEEE Electron Device Letters, 7, 506 (1986).CrossRefGoogle Scholar
3. Hwang, H., Ting, W., Maiti, B., Kwong, D. L., and Lee, J., Appl. Phys. Lett. 51, 1010 (1990).Google Scholar
4. Nissan-Cohen, Y., Shippar, J., and Frohman-Bentchkowsky, D., J. Appl. Phys., 57, 2830 (1985).Google Scholar
5. Chen, I.C., Holland, S. E., and Hu, C., IEEE Trans. Electron Devices, 32, 413 (1985).Google Scholar