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Reliability of Carbon Doped Base AlGaAs/GaAs HBTs as a Function of Collector Current

Published online by Cambridge University Press:  22 February 2011

S.J. Prasad  and
E. Hultine
S.J. Prasad
Affiliation:
Electronics Research Labs Tektronix, MS 50-223, Beaverton, OR 97077, USA
E. Hultine
Affiliation:
Electronics Research Labs Tektronix, MS 50-223, Beaverton, OR 97077, USA
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Abstract

The HBTs used in this study were grown by OMVPE. The base was carbon doped to 3×1019 cm−3 and the base thickness was 500Å. Several 3μ ×10μ HBTs were biased at Ic =2,4 and 10mA (VCE=2V) and maintained at TA=125°C. Based on 1000 hours of operation at 125°C, Ic =2mA is safe, Ic =4mA is marginal and Ic =10mA is fatal.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 300: Symposium D1 – III-V Electronic and Photonic Device Fabrication and Performance , 1993 , 609
Copyright
Copyright © Materials Research Society 1993

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References

REFERENCES

1. Yamada, F.M. et al. , “Reliability Analysis of Microwave GaAs/AlGaAs HBTs with Beryllium and Carbon doped Base”, paper U4 presented at the 1992 IEEE MTT Symposium, Albuquerque, NM, June 1-5,1992, Technical Digest, pp 739–742.Google Scholar
2. Ren, F. et al. , “Stability of Carbon and Beryllium doped base GaAs/A1GaAs Heterojunction Bipolar Transistors”, Applied Physics Letters, 59(27), pp 3613–3615, 1991.Google Scholar
3. Prasad, S.J. et al. , “High Performance AlGaAs/GaAs HBT IC Technology”, SPIE High-Speed Electronics and Optoelectronics Proceedings, Vol 1680, pp 12–26, March 1992.Google Scholar
4. Streit, D.C. et al. , “High-Reliability GaAs-AlGaAs HBTs by MBE with Be Base Doping and InGaAs Emitter Contacts”, IEEE Electron Device Letters, 12(9), pp 471–473,1991.Google Scholar