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Reliability Detection of Process-Induced Metallization Defects in GaAs Devices

Published online by Cambridge University Press:  18 May 2015

Steve H. Kilgore
Steve H. Kilgore*
Affiliation:
Technology Reliability & Quality, Freescale Semiconductor, Inc., Tempe, AZ 85284, USA
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Abstract

Process-induced defects in electroplated Au interconnect metallization on GaAs devices were detected during the course of reliability testing. Abnormally high lognormal sigma values (σ > 0.7) indicated the existence of a bi-modal failure mechanism. A distinct early lifetime failure mode was observed along with the intrinsic electromigration metallization wear-out failure mode. Physical characterization of the electroplated Au film revealed as-deposited nanoscale voids. Elimination of these voids through process improvement as well as suggested mechanisms for the early failures are discussed.

Keywords

metallic conductordefectselectromigration
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1792: Symposium CC/FF – Defects and Materials Issues in Semiconductors―Relationship to Optoelectronic Properties and Device Reliability , 2015 , mrss15-2132530
Copyright
Copyright © Materials Research Society 2015 

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References

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