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Relaxed Inx.Ga1−xas Graded Buffers Grown With Organometallic Vapor Phase Epitaxy on GaAs

Published online by Cambridge University Press:  10 February 2011

M. T. Bulsara ,
C. Leitz  and
E. A. Fitzgerald
M. T. Bulsara
Affiliation:
Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA, 02139.
C. Leitz
Affiliation:
Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA, 02139.
E. A. Fitzgerald
Affiliation:
Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA, 02139.
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Abstract

InxGa1−xAs structures with compositionally graded buffers were grown with organometallic vapor phase epitaxy (OMVPE) on GaAs substrates and characterized with plan-view and cross-sectional transmission electron microscopy (PV-TEM and X-TEM), atomic force microscopy (AFM), and x-ray diffraction (XRD). The results show that surface roughness experiences a maximum at growth temperatures where phase separation occurs in In.Gal.,As. The strain fields from misfit dislocations induce this phase separation in the <110> directions. At growth temperatures above and below this temperature, the surface roughness decreases significantly; however, only growth temperatures above this regime ensure nearly complete relaxed graded buffers with the most uniform composition caps. With the optimum growth temperature for grading InxGa1−x,As determined to be 700 °C, it was possible to produce In0.33Ga0.67As diodes on GaAs with threading dislocation densities < 8.5 × 106/cm2.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 484: Symposium F – Infrared Applications of Semiconductors II , 1997 , 631
Copyright
Copyright © Materials Research Society 1998

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References

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