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Relaxation of SiGe Films for the Fabrication of Strained Si Devices

Published online by Cambridge University Press:  02 August 2011

J.S. Maa ,
D. J. Tweet ,
J.J. Lee ,
S.T. Hsu ,
K. Fujii ,
T. Naka ,
T. Ueda ,
T. Baba ,
N. Awaya  and
K. Sakiyama
J.S. Maa
Affiliation:
Sharp Corporation, Tenri, Japan
D. J. Tweet
Affiliation:
Sharp Corporation, Tenri, Japan
J.J. Lee
Affiliation:
Sharp Corporation, Tenri, Japan
S.T. Hsu
Affiliation:
Sharp Corporation, Tenri, Japan
K. Fujii
Affiliation:
Sharp Labs of America, Camas, WA and IC Group
T. Naka
Affiliation:
Sharp Labs of America, Camas, WA and IC Group
T. Ueda
Affiliation:
Sharp Labs of America, Camas, WA and IC Group
T. Baba
Affiliation:
Sharp Labs of America, Camas, WA and IC Group
N. Awaya
Affiliation:
Sharp Labs of America, Camas, WA and IC Group
K. Sakiyama
Affiliation:
Sharp Labs of America, Camas, WA and IC Group
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Abstract

For the fabrication of bulk strained Si devices, a thin Si layer is deposited on a virtual substrate consisting of a several μm thick compositionally graded SiGe layer. A simpler approach utilizing H or He implantation to enhance relaxation of a thin SiGe film was recently reported. In this current work, hydrogen implantation is used to enhance the SiGe relaxation; and, relaxation beyond the previous reported limit is demonstrated. Experiments are performed on CVD deposited SiGe films with Ge fractions ranging from 20% to 40 % and thickness in the range of 100nm to about 500nm. After annealing at 800°C, relaxation of more than 80% is achieved. PMOS and NMOS devices are successfully fabricated and much enhanced hole and electron mobilities are demonstrated.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 768: Symposium G – Integration of Heterogeneous Thin-Film Materials and Devices , 2003 , G1.4/D4.4
Copyright
Copyright © Materials Research Society 2003

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